Hewlett-Packard Development Company, L.p.

Hewlett-Packard Company

Samsung Electronics Co., Ltd.

University of California

Agilent Technologies, Inc.

Hewlett-Packard Corporation

Hewlett-Packard Development, L.p.

Philip John Kuekes

Richard Stanley Williams

Shih-Yuan Wang

Theodore I Kamins

Duncan R Stewart

Raymond G Beausoleil

M Saif Islam

Zhiyong Li

Gregory Stuart Snider

Alexandre M Bratkovski

Wei E Wu

James R Heath

William M Tong

Jianhua Yang

William John Munro

Timothy Paul Spiller

Yong Qin Chen

Wei Guang Wu

Jingjing Li

Jason Blackstock

Sean D Barrett

John Paul Strachan

Michael S Schlansker

Boon Seong Ang

Nathaniel Quitoriano

Douglas Ohlberg

Carrie L Donley

Chandrakant D Patel

Pavel Kornilovich

Gadiel Seroussi

Gilberto Medeiros Ribeiro

Ron M Roth

Nobuhiko P Kobayashi

Dmitri Borisovich Strukov

W Bruce Culbertson

Warren J Robinett

Geoffrey Martin Lyon

Mehmet Fatih Yanik

Duncan J Stewart

Greg Snider

Joseph Warren Robinett

J Warren Robinett

Frederick A Perner

Marco Fiorentino

Shashank Sharma

Kent D Vincent

Charles Santori

Michael R Tan

Janice H Nickel

Matthew D Pickett

Kevin Francis Peters

Kenneth Ward

Sean Spillane

Qiangfei Xia

James Robert Eaton

Kay Lichtenwalter

William S Hancock

Joseph Straznicky

Adrian P Kent

Karen M Hahnenberger

Wei Wu

Shih Yuang Wang

Gargi Choudhary

R Stanley Williams

Gadiel Seroussl

Warren Robinett

J Warren Roblnett

Gadlel Seroussl

Gregory S Smider

Sean Xiao-an Zhang

Xia-An Zhang

M Salful Islam

M Saiful Islam

Stanley R Williams

Gadiel Seroissi

A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.

Metamaterial and dynamically reconfigurable hologram employing same

In an example of a method for controlling the formation of dopants in an electrically actuated device, a predetermined concentration of a dopant initiator is selected. The predetermined amount of the dopant is localized, via diffusion, at an interface between an electrode and an active region adjacent to the electrode. The dopant initiator reacts with a portion of the active region to form the dopants.

Electrically actuated device and method of controlling the formation of dopants therein

A programmable analog filter includes a crossbar array with a number of junction elements and a filter circuit being implemented within the crossbar array. At least a portion of the junction elements form reprogrammable components within the filter circuit. A method for using a programmable analog filter is also provided.

Programmable analog filter

Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode () and an alloy electrode (). The device also includes an active region () sandwiched between the electrode and the alloy electrode. The alloy electrode forms dopants in a sub-region of the active region adjacent to the alloy electrode. The active region can be operated by selectively positioning the dopants within the active region to control the flow of charge carriers between the electrode and the alloy electrode.

Using alloy electrodes to dope memristors

Various embodiments of the present invention are directed to negative refractive index-based holograms that can be electronically controlled and dynamically reconfigured to generate one or more color three-dimensional holographic images. In one aspect, a hologram comprises a phase-control layer having a plurality of phase modulation elements. The phase-modulation elements are configured with a negative effective refractive index and selectively transmit wavelengths associated with one of three primary color wavelength. The hologram also includes an intensity-control layer including a plurality of intensity-control elements. One or more color three-dimensional images can be produced by electronically addressing the phase-modulation elements and intensity-control elements in order to phase shift and control the intensity of light transmitted through the hologram. A method for generating a color holographic image using the hologram is also provided, as is a system for generating a color holographic image.

Dynamically reconfigurable holograms for generating color holographic images

An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.

A memory device () includes a semiconductor wire including a source region (), a drain region (), and a channel region () between the source region () and the drain region (). A gate structure that overlies the channel region includes a memristive portion () and a conductive portion () overlying the memristive portion ().

Memristive transistor memory

A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.

Switching device and methods for controlling electron tunneling therein

A multilayer memristive device includes a first electrode; a second electrode; a first memristive region and a second memristive region which created by directional ion implantation of dopant ions and are interposed between the first electrode and the second electrode; and mobile dopants which move within the first memristive region and the second memristive region in response to an applied electrical field.

Multilayer memristive devices

Various embodiments of the present invention are direct to nanoscale, reconfigurable memristor devices. In one aspect, a memristor device () comprises an active region () sandwiched between a first electrode () and a second electrode (). The active region including a non-volatile dopant region () selectively formed and positioned within the active region.

Controlled placement of dopants in memristor active regions

A photonic interconnect method avoids high capacitance electric interconnects by using optical signals to communicate data between devices. The method can provide massively parallel information output by mapping logical addresses to frequency bands, so that modulation of a selected frequency band can encode information for a specific location corresponding to the logical address. Wavelength-specific directional couplers, modulators, and detectors, which can be fabricated at defects in a photonic bandgap crystal, can be employed for the photonic interconnect method. The interconnect method can be used for both classical and quantum information processing.

Photonic interconnect method

A decoding structure employs a main terminal (), a first memristive switch () connected between the main terminal () and a first addressable terminal (), and a second memristive switch () connected between the main terminal () and a second addressable terminal (). The second memristive switch () is oriented so that a voltage polarity on the main terminal () that tends to turn the first memristive switch () on tends to turn the second memristive switch () off.

Decoders using memristive switches

One embodiment of the present invention is directed to hybrid-nanoscale/microscale device comprising a microscale layer that includes microscale and/or submicroscale circuit components and that provides an array of microscale or submicroscale pins across an interface surface; and at least two nanoscale-layer sub-layers within a nanoscale layer that interfaces to the microscale layer, each nanoscale-layer sub-layer containing regularly spaced, parallel nanowires, each nanowire of the at least two nanoscale-layer sub-layers in electrical contact with at most one pin provided by the microscale layer, the parallel nanowires of successive nanoscale-layer sub-layers having different directions, with the nanowires of successive nanoscale-layer sub-layers intersecting to form programmable crosspoints.

Dense nanoscale logic circuitry

A demultiplexed nanowire sensor array for detecting different chemical and biological species are provided, comprising a sensor array and a demultiplexer array. Methods of detecting at least two chemical and/or biological species are also provided, using the demultiplexed nanowire sensor array.

Demultiplexed nanowire sensor array for detection of chemical and biological species

A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.

Gain-clamped semiconductor optical amplifiers

Growing community of inventors

Menlo Park, CA, United States of America

Philip John Kuekes