National Research Council of Canada

Philip J Poole

Zhenguo Lu

Jiaren Liu

Emil S Koteles

Shoude Chang

Sylvain Charbonneau

Daniel Poitras

Chunying Song

Sylvain Raymond

Pedro Barrios

Michael Davies

Geofrey C Aers

Jian Jun He

Mohamed Rahim

Greg Pakulski

Pedro Barriors

A synthesized grating is provided comprising a substrate/layer, and a plurality of alternating aperiodic non-uniform low and high index profiles on a surface of the substrate/layer defining a transmission/reflection spectrum for one of either single or multi-frequency operation of said grating in an optical cavity. A method is also provided for designing the synthesized grating, comprising determining a grating structure of given profiles through analysis of an optimized weighted sum and mapping the grating profile to said surface with the plurality of alternating non-uniform low and high index profiles. A distributed feedback laser is also provided having top, bottom and two sides, comprising a top electrode, a cladding layer disposed below the top electrode a bottom electrode, a substrate disposed above the bottom electrode, one of either an active or passive waveguide layer, a synthesized aperiodic grating layer providing distributed mirrors, and wherein the waveguide layer and synthesized aperiodic grating layer are disposed between said the substrate and cladding layer and are separated by a spacer layer.

Synthesized aperiodic gratings and method of manufacture

A technique for narrowing a linewidth of a plurality of lines of a coherent comb laser (CCL) concurrently comprises providing a mode-locked semiconductor coherent comb laser (CCL) adapted to output of at least 4 mode-locked lines; tapping a fraction of a power from the CCL from the laser cavity to form a tapped beam; propagating the tapped beam to an attenuator to produce an attenuated beam; and reinserting the attenuated beam into the laser cavity, where the reinserted beam has a power less than 10% of a power of the tapped beam. The reinsertion allows the CCL to be operated to output the mode-locked lines, each with a linewidth of less than 80% of the original linewidth. By propagating the tapped and attenuated beams on a solid waveguide, and ensuring that the secondary cavity is polarization maintaining, improved stability of the linewidth narrowing is ensured.

Stable linewidth narrowing of a coherent comb laser

A multi-band (multi-color) multiwavelength mode locked laser diode is provided by dynamic phase compensation of a quantum dot active medium. The laser diode is provided with a PIN diode structure where the active medium consists of a plurality of layers of quantum dots such as those produced by self-assembly from known chemical beam epitaxy methods. The multiplicity of bands may be produced by AC Stark splitting, frequency selective attenuation, or by the inclusion of multiple different layers having different, respective, peak ASE emissions. Dispersion compensation within laser facets, waveguides, and the optically active media permit the selection of a fixed dispersion within the cavity. A dynamic group phase change induced by the AC Stark effect permits compensation of the fixed dispersion sufficiently to produce an intraband mode-locked laser. Even interband mode locking was observed.

Multi-band multiwavelength quantum dot mode-locked lasers

Methods and devices for providing a multiwavelength laser which may be used for multicasting and other optical communications uses. The present invention provides a quantum dot based multiwavelength laser with a monolithic gain block. The Fabry-Perot gain block has both upper and lower InP cladding layers. The laser system has a middle quantum dot layer with multiple stacked layers of InAs quantum dots embedded in InGaAsP. When provided with a CW injection current, the laser system produces an output spectra with equally spaced multiple emission peaks. With an input optical data signal applied to the laser system, the laser system duplicates the data in the input signal across multiple different wavelengths.

Quantum dot based semiconductor waveguide devices

Bandgap tuning of semiconductor well structure

An active semiconductor device that performs in a substantially polarization independent manner. A quantum well waveguide is intermixed by intermixing atoms across an interface between well and barrier layers. The atoms include at least 2 groups wherein intermixing of one group is at a substantially greater rate than another group. Cations are interdiffused at a greater rate than said anions across interfaces between well and barrier layers. The intermixing must be sufficient to provide strain within layers of the waveguide and sufficient to at least partially degenerate light hole and heavy hole bands of the structure. Preferably intermixing is sufficient to completely degenerate light hole and heavy hold bands to essentially produce a device that is completely polarization independent.

Fabrication of quantum well polarization independent active devices

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Ottawa, Canada

Philip J Poole