Hughes Aircraft Company

International Business Machines Corporation

Philip J Coane

Arthur R Zingher

Tai-Hon P Chang

Fritz-Jurgen Hohn

Walter W Molzen, Jr

Apparatus and methods are disclosed for inspecting unsintered single or multiple layer ceramic specimens containing or carrying metal paste patterns of the type commonly used to ultimately form laminated multilayer ceramic (MLC) carriers for large scale integrated (LSI) chips. A relatively large surface area of an unsintered ceramic specimen (large in comparison with the minimum feature size of the paste patterns) is temporarily electrically contacted with a conforming electrode. The conforming electrode makes non-damaging electrical contact to any metallic paste exposed at the contacted area. Electric charge is either collected or delivered by this electrode, depending upon the mode of operation. The electrical continuity of metallic paste paths which contact the electrode and extend through the unfired ceramic specimen to surface positions not contacted by the electrode are tested either by delivering electric charge to the other surface locations and correlating therewith the collection of charge by the electrode, or by delivering charge by the electrode to all paste paths in contact therewith and detecting the presence of charge at the other surface locations. A preferred method either for delivering charge to such other surface locations or for detecting charge at such other surface locations is by using an electron probe beam. Various embodiments for the conforming electrode are described.

Inspection of unsintered single layer or multilayer ceramics using a

The specification describes a mask structure comprising a resist pattern having a controlled line profile, for use in defining a predetermined region on and above a substrate. First, a composite electron-beam sensitive resist comprising a bottom layer of resist, a middle layer of a chosen conductive material, and a top layer of resist is formed on a selected substrate. The substrate with the composite resist is exposed to a beam of electrons to simultaneously define a predetermined pattern in the top and bottom layers of the resist. Next, a first chosen solvent is applied for a first predetermined period of time to develop the pattern in the top layer of resist, with the layer of conductive material protecting the bottom layer of resist from exposure to the first chosen solvent. Then, the portion of the conductive layer which is exposed after development of the top resist layer, is removed. Finally, a second chosen solvent is applied for a second predetermined period of time to develop the pattern in the bottom layer of resist and to thereby form a T-shaped profile in the composite resist, which serves as the mask structure to define the desired region on and above the substrate.

Mask structure for forming semiconductor devices, comprising

The specification describes a process for defining a predetermined region on and above a substrate by using a resist pattern having a controlled line profile. First, a composite electron-beam sensitive resist comprising a bottom layer of resist, a middle layer of a chosen conductive material, and a top layer of resist is formed on a selected substrate. The substrate with the composite resist is exposed to a beam of electrons to simultaneously define a predetermined pattern in the top and bottom layers of the resist. Next, a first chosen solvent is applied for a first predetermined period of time to develop the pattern in the top layer of resist, with the layer of conductive material protecting the bottom layer of resist from exposure of the first chosen solvent. Then, the portion of the conductive layer which is exposed after development of the top resist layer, is removed. Finally, a second chosen solvent is applied for a second predetermined period of time to develop the pattern in the bottom layer of resist and to thereby form a T-shaped profile in the composite resist, which defines the desired region on and above the substrate. In a preferred embodiment of the present invention, metal is subsequently deposited on the defined region of the substrate to form a metal pattern having the same controlled profile as the composite resist.

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Mahopac, NY, United States of America

Philip J Coane