Honeywell G.m.b.h.

Honeywell International Inc.

Other

Philip J Bohrer

Robert G Johnson

Robert E Higashi

Robert J Schnell

Gregory J Merten

Michael B Atlass

Ernest Allen Satren

Kurt L Elliason

Timothy L Johnson

A method for adjusting a plurality of controlled subsystems in a building or plant that facilitates cooperative energy usage with a utility provider. By referring to a single profile of adjustments that correspond to changes in the value of a utility signal and distributing this to each relevant controller for each subsystem, a single setback delta can be applied to each subsystem for each change in utility signal value (i.e., pricing information). Alternatively, multiple profiles can be used to provide for firmer control and thereby allow for different zones to respond differently to a single change signal sent by the utility provider.

Profile based method for deriving a temperature setpoint using a 'delta' based on cross-indexing a received price-point level signal

A method of employing add/shed routines to individual load controllers in a system for a building or plant that has more than one load. It allows for cooperative adjustments of energy usage in accord with prearranged exigency information agree between the utility provider and the building user. Duty cycle time is also adjustable in accord with tier level signal information provided by the utility.

Real time and/shed load based on received tier pricing and direct load

An integrated semiconductor device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body. The semiconductor body has a depression formed into the first surface of the body. A layer of thin film material covers at least a portion of the first surface and includes an electric, thermal-to-electric, or electric-to-thermal element. The diaphragm apparatus forms a slotted diaphragm substantially covering the depression. The slotted diaphragm includes one or more slots sized and oriented so that, in the fabrication of the device, an anisotropic etch placed on the slot or slots will completely undercut the diaphragm and form the depression. The electric, thermal-to-electric, or electric-to-thermal element is substantially supported by the diaphragm and, therefore, is substantially thermally and physically isolated from the semiconductor body.

Method of making slotted diaphragm semiconductor devices

Disclosed is a flow sensor housing comprising a base member having a flow channel formed therein. The base member comprises means for mounting a flow sensor so that, when a flow sensor is mounted therein, air flowing through the flow channel will be sensed by the flow sensor. The base member comprises the body of a standard semiconductor package. Standard semiconductor package conductors are integral to the base member. Each conductor has first and second terminal portions. The conductors and terminal portions are positioned so that the first terminal portion of a plurality of conductors are each adapted to connect to a higher level package adapted for receiving a standard semiconductor package and so that the second terminal portion of a plurality of conductors are each adapted for electrical connection to the flow sensor.

Flow sensor housing

Slotted diaphragm semiconductor device

An composite semiconductor device and a method of making is described. The device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body and a layer of thin film material covering at least a portion of the first surface. A depression formed in the first surface of the body with the layer of thin film material defines one or more members which have a predetermined configuration bridging the depression. First and second openings in the thin film layer flank each member such that an anisotropic etch placed on the openings undercuts the member to form the depression in a manner which substantially prevents undercutting of the semiconductor body below the thin film material at the boundaries of the predetermined configuration.

Semiconductor device structure and processing

A flow sensing or differential pressure sensing device utilizing a pair of bridges is disclosed. A first bridge operates a heating element and a temperature dependent resistor to in turn control an error integrator. The error feedback provides the voltage for both of the bridges thereby keeping the operation of the bridges compensated for ambient temperature variations.

Fluid flow sensing means with ambient temperature compensation

A condition responsive sensor is provided with a flow sensor channel means that is interconnected to a capillary tube restriction. The capillary tube restriction can be readily interchanged on the device to change the response of the condition responsive sensor. A very small flow sensor is placed in the flow sensor channel. The flow sensor channel and the capillary tube restriction can be placed generally parallel to one another to reduce the overall length of the device.

Condition responsive sensor for fluid flow measurement

Disclosed is an integral flow sensor and channel assembly comprising a flow sensor having a sensing element integral to a semiconductor body. The assembly further comprises support structure for supporting the flow sensor, the support structure having a first surface. An enclosed flow channel comprises the first surface formed into a groove running below the sensing element. The flow channel comprises an inlet and an outlet for providing flow across the sensing element. The sensing element is located in the flow channel between the inlet and the outlet. The support structure comprises apparatus for flip-chip mounting the semiconductor body, and the semiconductor body is flip-chip mounted so that the sensing element is positioned over the groove in the support structure.

Integral flow sensor and channel assembly

A flow sensor comprising a pair of thin film heat sensors and a thin film heater is disclosed. A base supports the sensors and heater out of contact with the base with the sensors disposed on opposite sides of the heater and closely adjacent thereto.

Flow sensor

A flow sensor comprising a pair of thin film heat sensors and a thin film heater is disclosed. A base supports the sensors and heater out of contact with the base with the sensors disposed on opposite sides of the heater. The heater is operated at a constant temperature above ambient temperature under both flow and no-flow conditions. Also disclosed is a flow sensor wherein a portion of the depression is devoid of a side wall.

A flow sensor comprising a pair of thin film heat sensors and a thin film heater is disclosed. The flow sensor further comprises a semiconductor body with a depression therein and structure connecting the heater and the sensors to the body and bridging the depression so that at least a major portion of the heater and the sensors are out of contact with the body. The sensors are disposed on opposite sides of the heater, the structure connecting comprising two thin film members bridging the depression, each member comprising one sensor and a portion of the heater.

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Minneapolis, MN, United States of America

Philip J Bohrer