At&t Bell Laboratories

Lucent Technologies Inc.

Bell Telephone Laboratories

Agere Systems Optoelectronics Guardian Corp.

Philip J Anthony

David Alan Ackerman

Dirk Joachim Muehlner

Eugene I Gordon

Bertram Schwartz

Louis A Koszi

Robert Louis Hartman

Lucian Arthur D'Asaro

William Baxter Joyce

Leo M Chirovsky

John VanAtta Gates

Edmond J Murphy

Venkataraman Swaminathan

Fred Ludwig Heismann

Orval George Lorimor

Timothy Owen Murphy

Wilbur Dexter Johnston, Jr

Leonard J Ketelsen

Ralph Salvatore Moyer

Robert A Morgan

Vincent D Mattera

A system is provided for mounting a fiber between locks by placing the locks at or near the natural inflection points of a sinusoidally curved fiber. This is accomplished by angularly offsetting the fiber exiting the locks at equal angles from an imaginary center line drawn between the locks, and by providing enough slack in the fiber between the locks to cause the inflection points to be positioned at or near the locks.

Fiber locking system

An apparatus for stabilizing the wavelength of light emitted by a laser or light source comprising a divider for dividing a sample of emitted light into a first and second portion; a first photodetector configured to measure an intensity of the first portion and a second photodetector configured to measure an intensity of the second portion, the second photodetector configured to receive the emitted light via an optical frequency discriminator, such as a dielectric coating, wherein the optical frequency discriminator is configured to modify the intensity of the emitted light at the second photodetector as a function of an optical frequency of the emitted light; and a processor configured to maintain a desired level corresponding to a ratio of the intensity measured by the first photodetector and the intensity measured by the second photodetector, so as to provide a feedback control signal to adjust the wavelength of the emitted light. In one embodiment, the first and second photodetectors are photodetector diodes having a base electrode, a first electrode and a second electrode. The diode is configured to generate an electrical current between the base electrode and the first electrode corresponding to the intensity of light received by the first photodetector and to generate an electrical current between the base electrode and the second electrode corresponding to the intensity of light received by the second photodetector. In still another embodiment, the sample is a back-facet emission emitted by the source, wherein the entire apparatus is disposed on a silicon chip having the frequency discriminating dielectric coating applied directly to its surface.

Wavelength stabilized laser

The invention is a photodetector device and a lightguide circuit incorporating the device. The photodetector device includes a semiconductor region for absorbing light which is incident on an edge surface of the device. The region above the absorbing region is narrow at the edge and fans out in the direction of light propagation in the device.

Edge receptive photodetector devices

The invention disclosed is a circuit for regulating optical power levels. Electrooptic attenuators are used to control optical output intensity by means of feedback loops from the outputs of the attenuators to the electrodes of the attenuators which determine the amount of light going to the outputs. The attenuators may be used in combination with an optical switch array in a wavelength division multiplexing system.

Power regulation in optical networks

A light emitting device uses a vertical cavity surface emitting laser having a voltage controlled mirror which is used, for example, to turn the laser ON and OFF by varying the reflectivity of one mirror forming the laser cavity.

Vertical cavity laser with mirror having controllable reflectivity

A semiconductor distributed feedback laser having a grating with .lambda./4 phase shift which is produced by moving the left and right sections of the grating with respect to each other in a direction perpendicular to the longitudinal axis of the active region.

Phase shifted distributed feedback laser

Disclosed is an optical device producing single mode laser emission. The device includes a semiconductor laser which would normally emit a number of closely spaced longitudinal modes and a filter which receives light from the laser active layer and reflects light back to the active layer. The filter includes at least one thin, optically absorbing layer, a dielectric layer, and a reflecting layer. The thickness and refractive indices of the layers are such that the filter reflectivity has a number of narrow maxima, but only one which lies within the gain bandwidth of the laser. The width of the peak and the background amplitude between peaks is such that only a single longitudinal mode of the laser is allowed to oscillate.

Single mode laser emission

The property of Group III-V compound materials, whereby ion bombarded material becomes highly resistive but recovers its original low resistivity by annealing at a temperature which is dopant and material dependant, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.

Production of semiconductor structures with buried resistive or

Disclosed are double heterostructure junction lasers and incoherent LEDs in which the active region comprising Al.sub.z Ga.sub.1-z As.sub.1-y Sb.sub.y 0.001.ltoreq.y.ltoreq.0.02 and in which the cladding layers comprise Al.sub.x Ga.sub.1-x As, (x-z).gtoreq.0.20. Long lifetime lasers operating at wavelengths in the vicinity of 0.87-0.92 .mu.m are realized. Visible wavelength lasers and LEDs are also discussed.

Growing community of inventors

Bridgewater, NJ, United States of America

Philip J Anthony