Industrial Technology Research Institute

Winbond Electronics Corporation

Promos Technologies, Inc

Powerchip Semiconductor Corporation

Nany Technology Corporation.

Philip H Yeh

Te-Sheng Chao

Ming-Jung Chen

Ming-Jinn Tsai

A writing method for a phase change memory is disclosed. The writing method inputs a first writing pulse signal to a phase change memory to heat the phase change memory to above a first temperature and inputting a second writing pulse signal to the phase change memory to keep the phase change memory at a second temperature.

Writing method and system for a phase change memory

A programming method for a phase change memory based on the phase transformations between amorphous and crystalline phases is disclosed. The programming method comprises a current pulse with step waveform providing a first crystallization current pulse to the phase change memory and providing a second crystallization current pulse to the phase change memory. The first crystallization current pulse has a first rising edge, a first falling edge and a first peak current held for a first hold time. The second crystallization current pulse has a second peak current. The second peak current follows the first falling edge and is held for a second hold time.

Programming method for phase change memory

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Taipei, Taiwan

Philip H Yeh