Seagate Technology Incorporated

Philip George Pitcher

Sami Antrazi

Michael Allen Seigler

Nurul Amin

Yuhang Cheng

Insik Jin

Ming Sun

Michael Xuefei Tang

Scott Michael Franzen

Kurt W Wierman

Venkatram Venkatasamy

Tong Zhao

Florin Zavaliche

Edwin F Rejda

Dierk Guenter Bolten

Edwin Frank Redja

Edward F Rejda

Methods that include forming at least a portion of a near field transducer (NFT) structure; depositing a material onto at least one surface of the portion of the NFT to form a metal containing layer; and subjecting the metal containing layer to conditions that cause diffusion of at least a portion of the material into the at least one surface of the portion of the NFT; and devices formed thereby.

Methods of forming portions of near field transducers (NFTS) and articles formed thereby

A device including a magnetic structure, the magnetic structure having a substrate adjacent surface and a second, opposing surface, the magnetic structure having a near field transducer (NFT), wherein the NFT includes gold or an alloy thereof, and is positioned at the second surface an overcoat structure; and a film structure, the film structure positioned between the magnetic structure and the overcoat structure, the film structure having a total thickness of not greater than about 100 &#x212b;, and the film structure including: a first interfacial structure having a first and a second opposing surface; a second interfacial structure having a first and a second opposing surface; and an intermediate structure wherein the first surface of the first interfacial structure is positioned adjacent the NFT of the magnetic structure, and the second surface of the second interfacial structure is positioned adjacent the overcoat structure, and the intermediate structure is positioned between the first interfacial structure and the second interfacial structure, and wherein the first interfacial structure includes one or more rare earth elements, one or more alkaline earth metals, one or more alkali metals, or a combination thereof.

Magnetic devices including film structures

An apparatus having at least an air bearing surface (ABS), the apparatus including a near field transducer (NFT) positioned adjacent the ABS of the apparatus, wherein the NFT includes a plasmonic material; and not greater than about 200 ppm of one or more microalloy dopants.

Magnetic devices including near field transducer

A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including moderately charged ions (MCIs), substantially all the MCIs independently have charges from &#xb1;2 to &#xb1;6 and kinetic energies of not greater than about 200 eV, wherein the MCIs do not penetrate more than about 30 &#x212b; into the surface of the substrate to form a layer on the substrate.

Methods of forming layers

A device including a magnetic structure having a substrate adjacent surface and a second, opposing surface and including a NFT that includes gold or an alloy thereof, and is positioned at the second surface; an overcoat structure; and a film structure positioned between the magnetic structure and the overcoat structure, the film structure having a total thickness of not greater than about 100 &#x212b;, and including: a first interfacial structure; a second interfacial structure; and an intermediate structure positioned adjacent the NFT of the magnetic structure, and the second interfacial structure positioned adjacent the overcoat structure, and the intermediate structure positioned between the first interfacial structure and the second interfacial structure, and wherein the first interfacial structure includes one or more rare earth elements, one or more alkaline earth metals, one or more alkali metals, or a combination thereof.

Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

Method of forming a programmable metallization memory cell

Programmable resistive memory cell with oxide layer

A ferroelectric polarization pattern with differing feedback signals. An apparatus including a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a first switchable polarization state domain and a second switchable polarization state domain that are both switchable by an applied signal. The first switchable polarization state domain has a first feedback signal in response to the applied signal that is different than a second feedback signal of the second switchable polarization state domain at the applied signal.

Growing community of inventors

Shakopee, MN, United States of America

Philip George Pitcher