Other

Hewlett-packard Company

Agilent Technologies, Inc.

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies Ecbu IP (singapore) Pte. Ltd.

Philip Gene Nikkel

Ray Myron Parkhurst

Michael J Jennison

John Shi Sun Wei

Thomas Edward Dungan

David W Hula

A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.

Metal-oxide-semiconductor high electron mobility transistors and methods of fabrication

A component having an airdome enclosure that protects the component from its external environment. An airdome enclosure according to the present techniques avoids the high costs of employing special materials and/or specialized process steps in the manufacture of a component. An electronic component according to the present techniques includes a set of substructures formed on a substrate and an airdome enclosure over the substructures that protects the substructures and that hinders the formation of parasitic capacitances among the substructures.

Airdome enclosure for components

An optical barrier made of tungsten (W) or titanium-tungsten (TiW). A layer of the optical barrier material is deposited over a transparent layer such as indium tin oxide (ITO). The optical barrier material is then patterned using photolithography processing steps and hydrogen peroxide as an etchant. The patterned optical barrier material acts as a light-shielding layer over a light-sensing device to form a dark reference device or dark pixel.

Optical barrier

A multi-level reticle is described which comprises a multiplicity of integrated circuit mask patterns. The mask patterns are positioned in separate areas on the reticle. The reticle is adapted to be positioned in a projection stepper apparatus for projection of light through one of the areas of the reticle to project a mask pattern onto a substrate (e.g. a wafer) to form an image. The reticle is also adapted to be rotated about its center in a manner such that each of the other mask patterns on the reticle can be projected onto the substrate in registration with the image formed from projection of the first mask pattern onto the substrate. Typically the separate mask patterns are located in separate quadrants on the reticle when there are three or four mask patterns. When there are only two mask patterns, typically they are located in separate hemispheres on the reticle. By having multiple mask patterns on the same reticle, in separate areas on the reticle, it is possible to rotate the reticle in the projection stepper apparatus so that each mask pattern image projected is in registry with the images projected by the other mask patterns onto a wafer.

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Loveland, CO, United States of America

Philip Gene Nikkel