Verizon Laboratories Inc.

Gte Laboratories Incorporated

Philip G Rossoni

Pete Allen Boyer

Pablo A Vicharelli

David F Freeman

Brian M Ditchek

Mark Levinson

David R Freeman

Frederick Rock

A cellular network configuration tool is described that performs frequency assignments for use in a cellular network. The channels are assigned in accordance with input configuration data such as a channel separation matrix, geographic data, and requested channel assignments for each sector included in the cellular network being configured. The configuration is performed in accordance with predetermined constraints and criteria and quality of service input. The tool uses frequency assignment techniques to perform the channel assignments in accordance with varying constraints and criteria.

Methods and techniques in channel assignment in a cellular network

A method, executed on a simulation system ( ), characterizes propagation of a radiofrequency signal ( ) in a three-dimensional environment ( ). The method includes forming a database ( ) of propagation paths ( ) of the radiofrequency signal ( ) transmitted from a transmitter ( ) at a fixed location ( ) in the three-dimensional environment ( ). The propagation paths ( ) are represented by a plurality of line segments ( ) in the database ( ). Local line segments ( ) are selected from the plurality of line segments ( ) to establish a subset ( ) of the propagation paths ( ). The subset ( ) includes those propagation paths ( ) each having one of the local line segments ( ) proximate a location ( ) of a receiver ( ) in the environment ( ). Distinct multipath components ( ) representing distinct wavefronts of the radiofrequency signal ( ) are subsequently identified from the subset ( ) of the propagation paths ( ).

Method and system for characterizing propagation of radiofrequency signal

A junction field effect transistor having an array of electrically floating gate elements located between the control gate and the drain in the path of current flow from the source to the drain. As the drain voltage increases the depletion zone of the control gate expands until it reaches the nearest floating gate. The maximum electric field at the control gate is clamped while the nearest floating gate increases in potential and its depletion zone expands toward the next floating gate, and so on. In this way the applied voltage is spread over the array of floating gates clamping the maximum electric field at a value that is less than the avalanche breakdown field. Then, the avalanche breakdown voltage of the device is increased.

Floating gate array transistors

Growing community of inventors

Belmont, MA, United States of America

Philip G Rossoni