Northrop Grumman Systems Corporation

Philip C Smith

Li-shu Chen

Howard N Fudem

Thomas J Moloney

Nathan Bluzer

Harvey C Nathanson

Lawrence E Dickens

Silai V Krishnaswamy

David Krafcsik

R Chris Clarke

Donald E Crockett

A method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements. Such a system may embody a bolometer, which is well suited for detecting electromagnetic radiation between 90 GHz and 30 THz while operating at room temperature. The method also discloses a generalized process for manufacturing circuitry incorporating active and passive micro-electrical-mechanical systems in a silicon wafer.

Method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements

A plurality of electronic circuits and associated signal lines are positioned at respective locations on a base wafer. A cover wafer, which fits over the base wafer, includes a corresponding like number of locations each including one or more cavities to accommodate the electronic circuit and associated signal lines. The cover wafer includes a plurality of vias for making electrical connection to the signal lines. A multi layer metallic arrangement hermetically seals the periphery of each location as well as sealing the bottom of each via. The joined base and cover wafers may then be diced to form individual die packages.

Wafer scale package and method of assembly

A capacitive type MEMS switch having a conductor arrangement comprised of first and second RF conductors deposited on a substrate. A bridge member having a central enlarged portion is positioned over the conductor arrangement. In one embodiment, the first RF conductor has an end defining an open area in which is positioned a pull down electrode, with the end of the first RF conductor substantially surrounding the pull down electrode. In another embodiment, two opposed RF conductors, each having ends with first and second branches, define an open area in which a pull down electrode is positioned. A dielectric layer is deposited on the conductor arrangement such that when a pull down voltage is applied to the pull down electrode, the switch impedance is significantly reduced so as to allow signal propagation between the RF conductors.

Capacitive type microelectromechanical RF switch

A solid state microwave switch having a plurality of adjacent parallel fingers covered with an oxide layer. One end of a finger is an N&plus; source region while the other end is an N&plus; drain region, with a current conducting N region between them. The oxide layer is covered with a gate layer to which a gate signal is applied for control of current between the N&plus; regions through the N region. The gate layer is highly resistive and has a sheet resistance on the order of millions of ohms per square. The length from the source to drain region is around 2 &mgr;m, and the fingers are spaced with a pitch of around 1 &mgr;m.

Solid state RF switch with high cutoff frequency

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Ellicott City, MD, United States of America

Philip C Smith