Alliance for Sustainable Energy, LLC

Midwest Research Institute

U.S. Department of Energy

Philip Anthony Parilla

David Samuel Ginley

Chunmei Ban

Daniel Ruddy

Seoung-Bum Son

Yufeng Zhao

Raghu Nath Bhattacharya

Aaron Daniel Martinez

Daniel Joseph Friedman

Emily Lowell Warren

Thomas Gennett

Anne C Dillon

Michael J Heben

Richard D Blaugher

Eric Steven Toberer

Nathan P Siegel

Sovannary Phok

Michele L Olsen

Raghuthan Bharacharya

Jonathan E Rea

Corey Lee Hardin

Christopher J Oshman

Disclosed herein are devices, systems and methods useful for downhole sensors and electronics suitable for harsh thermal and mechanical environment associated with high-temperature geothermal drilling and high-temperature/high-pressure oil and gas drilling.

High temperature and high pressure AlGaN/GaN electronics

An aspect of the present invention is an electrical device, where the device includes a current collector and a porous active layer electrically connected to the current collector to form an electrode. The porous active layer includes MgBparticles, where x&#x2265;1, mixed with a conductive additive and a binder additive to form empty interstitial spaces between the MgBparticles, the conductive additive, and the binder additive. The MgBparticles include a plurality of boron sheets of boron atoms covalently bound together, with a plurality of magnesium atoms reversibly intercalated between the boron sheets and ionically bound to the boron atoms.

Magnesium-based methods, systems, and devices

An aspect of the present disclosure is a system that includes a thermal valve having a first position and a second position, a heat transfer fluid, and an energy converter where, when in the first position, the thermal valve prevents the transfer of heat from the heat transfer fluid to the energy converter, and when in the second position, the thermal valve allows the transfer of heat from the heat transfer fluid to the energy converter, such that at least a portion of the heat transferred is converted to electricity by the energy converter.

Solar thermoelectricity via advanced latent heat storage

An aspect of the present invention is an electrical device, where the device includes a current collector and a porous active layer electrically connected to the current collector to form an electrode. The porous active layer includes MgBparticles, where x&#x2267;1, mixed with a conductive additive and a binder additive to form empty interstitial spaces between the MgBparticles, the conductive additive, and the binder additive. The MgBparticles include a plurality of boron sheets of boron atoms covalently bound together, with a plurality of magnesium atoms reversibly intercalated between the boron sheets and ionically bound to the boron atoms.

A Bi&#x2014;Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

Bi-Se doped with Cu, p-type semiconductor

Metal-doped single-walled carbon nanotubes and production thereof. The metal-doped single-walled carbon nanotubes may be produced according to one embodiment of the invention by combining single-walled carbon nanotube precursor material and metal in a solution, and mixing the solution to incorporate at least a portion of the metal with the single-walled carbon nanotube precursor material. Other embodiments may comprise sputter deposition, evaporation, and other mixing techniques.

Metal-doped single-walled carbon nanotubes and production thereof

A process for preparing a superconducting film, such as a thallium-barium-calcium-copper oxide superconducting film, having substantially uniform phase development. The process comprises providing an electrodeposition bath having one or more soluble salts of one or more respective potentially superconducting metals in respective amounts adequate to yield a superconducting film upon subsequent appropriate treatment. Should all of the metals required for producing a superconducting film not be made available in the bath, such metals can be a part of the ambient during a subsequent annealing process. A soluble silver salt in an amount between about 0.1% and about 4.0% by weight of the provided other salts is also provided to the bath, and the bath is electrically energized to thereby form a plated film. The film is annealed in ambient conditions suitable to cause formation of a superconductor film. Doping with silver reduces the temperature at which the liquid phase appears during the annealing step, initiates a liquid phase throughout the entire volume of deposited material, and influences the nucleation and growth of the deposited material.

Process for preparing superconducting film having substantially uniform

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Lakewood, CO, United States of America

Philip Anthony Parilla