Seagate Technology Incorporated

Philip A Seekell

Dimitar Velikov Dimitrov

Sining Mao

Alexander Mikhailovich Shukh

Lujun Chen

Erli Chen

Ananth Naman

A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.

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Goffstown, NH, United States of America

Philip A Seekell