Taiwan Semiconductor Manufacturing Comp. Ltd.

Phil Sun

Shiu-Ko JangJian

Yu-Jen Chien

Wan-Ting Huang

Kei-Wei Chen

Jung-Chih Tsao

Miao-Cheng Liao

An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.

Oxygen-rich layers underlying BPSG

A method for forming an alpha-tantalum layer comprising disposing a nitrogen containing base layer on a semiconductor substrate, bombarding the nitrogen containing base layer with a bombarding element, thereby forming an alpha-tantalum seed layer, and sputtering a layer of tantalum on the alpha-tantalum seed layer, thereby forming a surface layer of substantially alpha-tantalum.

Alpha tantalum capacitor plate

Growing community of inventors

Kaohsiung, Taiwan

Phil Sun