Nexperia B.v.

Phil Rutter

Ricardo Lagmay Yandoc

Adam Richard Brown

Yan Lai

Steven Peake

Hungjin Kim

This disclosure relates to a semiconductor device, and associated method of manufacture. The semiconductor device includes, a MOSFET integrated with a p-n junction, the p-n junction arranged as a clamping diode across a source contact and a drain contact of the MOSFET. The MOSFET defines a first breakdown voltage, and the clamping diode defines a second breakdown voltage, and the first breakdown voltage is greater than the second breakdown voltage. A series resistance of the clamping diode includes a drift resistance and a clamping resistance, and the drift resistance is formed together with the clamping diode and the clamping resistance is formed independently from the clamping diode and configured to secure a uniform avalanche current.

Semiconductor device with a clamping diode

A semiconductor device is provided, including a substrate having a first epitaxial layer arranged thereon and a voltage blocking element arranged in the first epitaxial layer, a second epitaxial layer arranged on the first epitaxial layer, and a vertical switching element arranged in the second epitaxial layer.

Semiconductor device and method of manufacture

The present disclosure relates to a trench metal-oxide-semiconductor field-effect transistor, trench MOSFET, and to a method for manufacturing such transistors. In particular, the present disclosure relates to trench MOSFETs having deep trenches adjacent to the more shallow gate defining trench for obtaining a RESURF effect. According to the present disclosure, an ion implantation region of a charge type similar to that of the drift region is formed in the drift region. The ion implantation region extends below the deep trenches of the trench MOSFET and is vertically aligned with a base of the deep trenches.

Trench MOSFET

A packaged semiconductor device is provided, including a first semiconductor die on which a first electrical component is integrated that includes a first terminal at a first surface of the first die and a second terminal at a second surface of the first die, a second semiconductor die similar to the first die, with a first surface of the second die facing the first surface of the first die. A first conductive element on the second surface of the first side electrically connected to the second terminal of the first electrical component, a second conductive element is on the second surface of the second die electrically connected to the second terminal of the second electrical component, and a third conductive element between the first surfaces of the first and the second die. The first terminals of the first and second electrical components are electrically connected through the third conductive element.

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Nijmegen, Netherlands

Phil Rutter