Samsung Electronics Co., Ltd.

Phil-Jae Chang

Tae-Jin Kim

Young-jun Park

Kye-won Maeng

Kwang-Joon Yoon

A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.

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Seoul, South Korea

Phil-Jae Chang