Qualcomm Incorporated

Phanikumar Konkapaka

Bin Yang

Ye Lu

Yun Yue

Chuan-Hsing Chen

A metal-oxide-semiconductor (MOS) device for radio frequency (RF) applications may include a guard ring. The guard ring may surround the MOS device and at least one other MOS device. The MOS device may further include a level zero contact layer coupled to a first interconnect layer through level zero interconnects and vias. The first interconnect layer may be for routing to the MOS device.

Enhanced active and passive devices for radio frequency (RF) process and design technology

An integrated circuit formed with a process that enables multiple types of gate stacks improves a quality factor of metal oxide semiconductor (MOS) varactors at the device level. In one instance, the integrated circuit includes multiple first type transistors having a first gate stack with a first resistance and multiple second type transistors having a second gate stack with a second resistance that is higher than the first resistance. The integrated circuit also includes a metal oxide semiconductor varactor having the first gate stack with the first resistance.

Growing community of inventors

San Diego, CA, United States of America

Phanikumar Konkapaka