Cornell University

Phani Konkapaka

Huaqiang Wu

Michael Spencer

Yuri Makarov

GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert gas is N, and the powder source is GaN powder that is loaded into source chambers. The GaN powder is congruently evaporated into Ga and Nvapors at temperatures between approximately 1000 and 1200&#xb0; C. The formation of Ga liquid in the powder is suppressed by the purging of an inert gas through the powder. The poser may also be isolated from a nitride containing gas provided at the growth cite. In one embodiment, the inert gas is flowed through the powder.

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Boise, ID, United States of America

Phani Konkapaka