Advanced Micro Devices Corporation

Globalfoundries Singapore Pte. Ltd.

Pey Kin Leong

Juan Boon Tan

Danny Pak-Chum Shum

Fan Zhang

Soh Yun Siah

Pinghui Li

Daxiang Wang

Laiqiang Luo

Jiann Min Chin

Zhiqiang Teo

Venkat Krishnan Ravikumar

Joel Yang Kwang Wei

Yu Jin Eugene Kong

A reconfigurable optic probe is used to measure signals from a device under test. The reconfigurable optic probe is positioned at a target probe location within a cell of the device under test. The cell including a target net to be measured and non-target nets. A test pattern is applied to the cell and a laser probe (LP) waveform is obtained in response. A target net waveform is extracted from the LP waveform by: i) configuring the reconfigurable optic probe to produce a ring-shaped beam having a relatively low-intensity region central to the ring-shaped beam; (ii) re-applying the test pattern to the cell at the target probe location with the relatively low-intensity region applied to the target net and obtaining a cross-talk LP waveform in response; (iii) normalizing the cross-talk LP waveform; and (iv) determining a target net waveform by subtracting the normalized cross-talk LP waveform from the LP waveform.

Electro-optic waveform analysis process

Methods of producing integrated circuits are provided. An exemplary method includes patterning a source line photoresist mask to overlie a source line area of a substrate while exposing a drain line area. The source line area is between a first and second memory cell and the drain line area is between the second and a third memory cell. A source line is formed in the source line area. A source line dielectric is concurrently formed overlying the source line while a drain line dielectric is formed overlying a drain line area. A drain line photoresist mask is patterned to overlie the source line in an active section while exposing the source line in a strap section, and while exposing the drain line area. The drain line dielectric is removed from over the drain line area while a thickness of the source line dielectric in the strap section is reduced.

Method for producing integrated circuit memory cells with less dedicated lithographic steps

Growing community of inventors

Singapore, Singapore

Pey Kin Leong