Nxp B.v.

Petrus Magnee

Philippe Meunier-Beillard

Johannes Donkers

Joost Melai

Ihor Brunets

Mahmoud Al-sa'di

A method of making a semiconductor switch device and a semiconductor switch device made according to the method. The method includes depositing a gate dielectric on a major surface of a substrate. The method also includes depositing and patterning a gate electrode on the gate dielectric. The method further includes depositing an oxide to cover the top surface and sidewall(s) of the gate electrode. The method also includes, after depositing the oxide, performing a first ion implantation process at a first implantation dosage for forming a lightly doped drain region of the switch device. The method further includes forming sidewall spacers on the sidewall(s) of the gate electrode. The method also includes performing a second ion implantation process at a second implantation dosage for forming a source region and a drain region of the semiconductor switch device. The second implantation dosage is greater than the first implantation dosage.

Semiconductor switch device

Fabrication of a mono-crystalline emitter using a combination of selective and differential growth modes. The steps include providing a trench () formed on a silicon substrate () having opposed silicon oxide side walls (); selectively growing a highly doped mono-crystalline layer () on the silicon substrate in the trench; and non-selectively growing a silicon layer () over the trench in order to form an amorphous polysilicon layer over the silicon oxide sidewalls.

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Malden, Netherlands

Petrus Magnee