Nxp B.v.

Petrus H C Magnee

Raymond J E Hueting

Godefridus A M Hurkx

Wibo Daniel Van Noort

Johannes J T M Donkers

Jozef T M Van Beek

Jan Jacob Koning

Lis Karen Nanver

Celine Juliette Detcheverry

Ramon Jacob Havens

Celine J Detcheverry

Melanie M H Wagemans

Prabhat Agarwal

Francois I Neuilly

Eddy Kunnen

Johannes JTM Donkers

Wibo D Van Noort

Erwin Hijzen

Ramon J Havens

Erik P A M Bakkers

The present invention relates to a method of forming a micro cavity having a micro electrical mechanical system (MEMS) in a process, such as a CMOS process. MEMS resonators are being intensively studied in many research groups and some first products have recently been released. This type of device offers a high Q-factor, small size, high level of integration and potentially low cost. These devices are expected to replace bulky quartz crystals in high-precision oscillators and may also be used as RF filters. The oscillators can be used in time-keeping and frequency reference applications such as RF modules in mobile phones, devices containing blue-tooth modules and other digital and telecommunication devices.

Front end micro cavity

The invention relates to a semiconductor device () comprising a semiconductor body () with a high-ohmic semi-conductor substrate () which is covered with a dielectric layer () containing charges, on which dielectric layer one or more passive electronic components () comprising conductor tracks () are provided, wherein, at the location of the passive elements (), a region () is present at the interface between the semiconductor substrate () and the dielectric layer (), as a result of which the conductivity of an electrically conducting channel induced in the device () by the charges is limited at the location of the region (). According to the invention, the region () is formed by deposition and comprises a semi-insulating material. As a result, the device () has a very low high-frequency power loss because the inversion channel is formed in the semi-insulating region (). The device () further allows for a higher temperature budget and hence for the integration of active semiconductor elements () into the semiconductor body (). A very suitable semi-insulating material for the region () is SiC, SIPOS or POLYDOX.

Semiconductors device and method of manufacturing such a device

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Malden, Netherlands

Petrus H C Magnee