Other

Teledyne Scientific and Imaging, LLC

Innovative Technology Licensing LLC

Petra V Rowell

D Morgan Tench

Leslie F Warren, Jr

Berinder P S Brar

Miguel Urteaga

Richard L Pierson, Jr

A mask layer is applied to a surface of a semiconductor structure or a seed layer deposited on the surface. The mask layer has a submicron width opening with a high aspect ratio that exposes a portion of the surface or seed layer. Conductive material is conformed to the opening, for example by plating, to form a first contact on the surface or seed layer. The mask and the top layer of the semiconductor structure, except for the portion under the first contact, are removed to expose a second layer of the semiconductor structure. An insulating layer is formed along the sidewalls of the first contact and the top layer of the semiconductor structure beneath the first contact. A mask is then applied to the second layer and a second contact is formed by selectively depositing metal only on the portion of the second layer exposed by the opening.

Semiconductor devices having plated contacts, and methods of manufacturing the same

Reversible electrochemical mirror (REM) devices typically comprise a conductive oxide mirror electrode that is substantially transparent to radiation of some wavelengths, a counter electrode that may also be substantially transparent, and an electrolyte that contains ions of an electrodepositable metal. A voltage applied between the two electrodes causes electrodeposition of a mirror deposit on the mirror electrode and dissolution of the mirror deposit on the counter electrode, and these processes are reversed when the polarity of the applied voltage is changed. Such REM devices provide precise control over the reflection and transmission of radiation and can be used for a variety of applications, including smart windows and automatically adjusting automotive mirrors. According to the present invention, REM mirror uniformity is improved with minimal sacrifice in switching speed by utilizing a lower drive voltage when the mirror electrode sheet resistance is high, and a higher drive voltage when sufficient mirror metal is present to appreciably reduce the sheet resistance. Faster switching without damage to the electrode or decomposition of the electrolyte is provided by adjusting the applied voltage by the resistive loss in the electrolyte. Optimum results are provided by adjusting the drive voltages for the mirror metal plating and erasure processes based on real-time measurements of cell current, mirror electrode sheet resistance and temperature. Such sheet resistance measurements can also be used to monitor and control the reflectance of the device.

Optimum switching of a reversible electrochemical mirror device

A reversible electrochemical mirror (REM) includes a first electrode and a second electrode, one of which is substantially transparent to at least a portion of the spectrum of electromagnetic radiation. An essentially nonaqueous electrolytic solution, disposed between the first and second electrodes, contains ions of an electrodepositable metal having a molar concentration of more than 0.5 M. The electrolytic solution also contains halide and/or pseudohalide anions having a total molar concentration ratio of at least 2:1 relative to the concentration of the electrodepositable metal cations. A negative electrical potential applied to the first electrode causes deposited metal to be dissolved from the second electrode into the electrolytic solution and to be electrodeposited from the solution onto the first electrode to form a mirror deposit, thereby affecting the reflectivity of the REM device for electromagnetic radiation. A positive electrical potential applied to the first electrode causes deposited metal to be dissolved from the first electrode into the solution and electrodeposited from the solution onto the second electrode, thereby decreasing the reflectivity of the REM mirror. It is usually necessary to apply a surface modification layer to the first electrode to ensure uniform nucleation so that a mirror electrodeposit having high reflectivity is obtained. The high molar concentration of mirror metal cations attained in essentially nonaqueous solvents by use of at least a 2:1 molar ratio of halide and/or pseudohalide anions to electrodepositable metal ions in the electrolyte provides the fast switching speed, inherent electrolyte stability, high deposit quality, good deposit erasure and long cycle life needed for practical applications. Increases above this 2:1 molar ratio may be required to optimize the device performance.

Fast-switching reversible electrochemical mirror (REM)

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Newbury Park, CA, United States of America

Petra V Rowell