Carl Zeiss Sms Ltd.

Carl Zeiss Smt Gmbh

Nawotec Gmbh

Petra Spies

Thorsten Hofmann

Klaus Edinger

Nicole Auth

Rainer Becker

Tristan Bret

Hans Wilfried Koops

Markus Bauer

Sergey Babin

Daniel Rhinow

Ottmar Hoinkis

Rainer Fettig

Marion Batz

Horst Schneider

Christian Felix Hermanns

David Lämmle

Katharina Gries

Sebastian Vollmar

Maximilian Rumler

Fan Tu

Laura Ahmels

Benjamin Herd

The present invention relates to a method for examining a beam of charged particles, including the following steps: producing persistent interactions of the beam with a sample at a plurality of positions of the sample relative to the beam and deriving at least one property of the beam by analyzing the spatial distribution of the persistent interactions at the plurality of positions.

Method and apparatus for examining a beam of charged particles

The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.

Method and apparatus for processing a substrate with a focused particle beam

The invention relates to a method for electron beam induced etching of a material () with the method steps providing at least one etching gas at a position of the material () at which an electron beam impacts on the material () and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas.

Method for electron beam induced etching

The invention relates to a method for electron beam induced etching of a layer contaminated with gallium, with the method steps of providing at least one first halogenated compound as an etching gas at the position at which an electron beam impacts on the layer, and providing at least one second halogenated compound as a precursor gas for removing of the gallium from this position.

Method for electron beam induced etching of layers contaminated with gallium

The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample.

Methods and systems for removing a material from a sample

The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate, storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate.

Method for electron beam induced deposition of conductive material

A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.

Method for high-resolution processing of thin layers using electron beams

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Mainz, Germany

Petra Spies