Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Lumileds LLC

Philips Lumileds Lighting Company LLC

Petra Huppertz

Thomas Juestel

Detlef Uwe Wiechert

Knuth Albertsen

Hans-Helmut Bechtel

Gerd O Mueller

Walter Mayr

Regina B Mueller-Mach

Matthias Heidemann

Wilhelm A Groen

Jens Meyer

Dieter W Mateika

Heinrich Von Busch

Bernd Rausenberger

Oliver Steigelmann

Joerg Feldmann

Dominik Uhlich

Embodiments include a device having a micro-LED that includes at least two, individually addressable light emitting diodes on a same substrate; a phosphor converter layer disposed on the micro-LED, the phosphor converter layer including phosphor particles having a D50 of greater than 1 &#x3bc;m and less than 10 &#x3bc;m.

Phosphor layer for micro-LED applications

A dielectric barrier Xe discharge lamp include discharge vessel with a gas filling containing Xe or a Xe/Ne mixture and a luminescent layer of a UV-B phosphor emitting in the UV-B range 280 to 320 nm. The luminescent layer includes a Gdactivated phosphor according to at least one the formulas of (YGdS)Al(BO), (LaGdS)Al(BO), (LaGdS)BO, (YGdSLu)PO, (YGdSLu)BO, (YGdSLu)AlO, Me(YGdS)F(Me=Li, Na, K; S&#x2550;Bi, Nd, Pr; 0.0&#x3c;x,z&#x2266;1.0; 0.0&#x3c;y&#x2266;0.1) or a mixture thereof. The luminescent layer may be sensitized by Bi, Pror Nd.

Dielectric barrier discharge lamp comprising an UV-B phosphor

A phosphor converted light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit light having a first peak wavelength; a first phosphor configured to emit light having a second peak wavelength; and a second phosphor configured to emit light having a third peak wavelength. The second phosphor is an Eu-activated phosphor, configured such that in the excitation spectrum at 298K and 1.013 bar, a maximum intensity in a wavelength range between 460 nm and 470 nm is at least 5% of a maximum intensity in a wavelength range between 220 nm to 320 nm.

Phosphor converted light emitting device

A gas discharge lamp with at least one capacitive coupling structure ( ) is described, which lamp has the particular characteristic that the coupling structure ( ) comprises a ceramic material which comprises pure BaTiO . In particular an additional doping of at least part of the BaTiO with barium leads to a material whose Curie temperature and saturation polarization are substantially higher and whose coercitive field strength is substantially smaller, so that a gas discharge lamp with a coupling structure manufactured from this material can be operated at substantially higher temperatures and at a lower operating voltage. Various dopings of the BaTiO with titanium, manganese, and lead are furthermore described.

Gas discharge lamp

A capacitor having a ceramic dielectric and at least two electrodes, the ceramic dielectric being predominantly composed of a dielectric, ceramic composition having a main component of BaTiO.sub.3 and/or �Ba.sub.1-y Sr.sub.y !Ti.sub.x O.sub.31 z, wherein 0.95.ltoreq.x.ltoreq.0.995, 0.ltoreq.y.ltoreq.0.04, z=2(1-x), and having at least an additive of the group formed by XMnO.sub.3, X.sub.2 MoO.sub.6, X.sub.2 WO.sub.6, X.sub.2 SiO.sub.5 +Mn.sub.2 SiO.sub.4 and Li.sub.2 SiO.sub.3 +Mn.sub.2 SiO.sub.4, and at least an additive of the group formed by Li.sub.2 SiO.sub.3, SiO.sub.2 and a mixture of 6 mol % Li.sub.2 O, 13 mol % BaO, 13 mol % SrO, 13 mol % MgO and 55 mol % SiO.sub.2, which is calcined at 800.degree. C., and, if necessary, an additive of the group formed by XInO.sub.3, XGaO.sub.3 and XAlO.sub.3, wherein X is one or more elements of the group formed by Y, Dy and Er, is characterized by a flat .DELTA.C/.DELTA.t curve and a stable dielectric behavior on exposure to temperature and voltage influences.

Multilayer capacitor comprising a dielectric of modified barium

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Roetgen, Germany

Petra Huppertz