Globalfoundries Inc.

Advanced Micro Devices Corporation

Petra Hetzer

Dmytro Chumakov

Wolfgang Buchholtz

Matthias Schaller

Axel Preusse

Markus Keil

Elvira Buchholtz

A capacitor is formed in nano channels in a conductive body. Embodiments include forming a source contact through a first inter layer dielectric (ILD), forming a conductive body on the first ILD, forming a second ILD on the conductive body, forming drain and gate contacts through the second ILD, conductive body, and first ILD, forming nano channels in the conductive body, forming an insulating layer in the channels, and metalizing the channels. An embodiment includes forming the nano channels by forming a mask on the second ILD, the mask having features with a pitch of 50 nanometers (nm) to 100 nm, etching the second ILD through the mask, etching the conductive body through the mask to a depth of 80% to 90% of the thickness of the conductive body, and removing the mask.

DRAM cell based on conductive nanochannel plate

During the fabrication of microstructure devices, such as integrated circuits, particles may be analyzed by displacing or removing the particles from the device surface and subsequently performing an analysis process. Consequently, a well-defined measurement environment may be established after removal of the particles, which may be accomplished on the basis of nanoprobes and the like. Hence, even critical surface areas may be monitored with respect to contamination and the like on the basis of well-established analysis techniques.

Method and system for particles analysis in microstructure devices by isolating particles

Analysis of chemical and physical characteristics of polymer species and etch residues caused in critical plasma-assisted etch processes for patterning material layers in semiconductor devices may be accomplished by removing at least a portion of these species on the basis of a probing material layer, which may be lifted-off from the patterned surface. The probing material layer may substantially suppress a chemical modification of the species of interest and may thus allow the examination of the initial status of these species.

Method and system for extracting samples after patterning of microstructure devices

By improving the purity of metal lines and the crystalline structure, the overall performance of metal lines, especially of highly scaled copper-based semiconductor devices, may be enhanced. The modification of the crystalline structure of the metal lines may be performed by a heat treatment generating locally restricted heating zones, which are scanned along the length direction of the metal lines, and/or a heat treatment comprising a heating step in a vacuum ambient followed by a heating step in a reducing ambient.

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Dresden, Germany

Petra Hetzer