Infineon Technologies Ag

Infineon Technologies Austria Ag

Petra Fischer

Ravi Keshav Joshi

Juergen Steinbrenner

Oliver Blank

Manfred Engelhardt

Werner Schustereder

Bernhard Goller

Christian Fachmann

Michael Roesner

Gudrun Stranzl

Andreas Riegler

Iris Moder

Wolfgang Jantscher

Roman Roth

Manfred Pippan

Peter Zorn

Alexander Binter

Waqas Mumtaz Syed

Kurt Pekoll

Johanna Schlaminger

Monika Cornelia Voerckel

One or more semiconductor manufacturing methods and/or semiconductor arrangements are provided. In an embodiment, a silicon carbide (SiC) layer is provided. The SiC layer has a first portion overlying a second portion. The first portion has a first side distal the second portion and a second side proximal the second portion. The first portion is converted into a porous layer overlying the second portion. The porous layer has a first side distal the second portion and a second side proximal the second portion. The porous layer is removed to expose a first side of the second portion. After removing the porous layer, the first side of the second portion has a surface roughness less than a surface roughness of the first side of the first portion and/or less than a surface roughness of the first side of the porous layer.

Semiconductor surface smoothing and semiconductor arrangement

According to various embodiments, a method for processing an electronic device may include: forming a patterned hard mask layer over a power metallization layer, the patterned hard mask layer exposing at least one surface region of the power metallization layer; and patterning the power metallization layer by wet etching of the exposed at least one surface region of the power metallization layer.

Method for patterning a power metallization layer, electronic device and method for processing an electronic device

Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation layer formed on top of the semiconductor body, forming a contact electrode electrically connected to the semiconductor body in the at least one contact hole, and annealing the semiconductor body to diffuse the recombination center particles in the semiconductor body. Forming the contact electrode includes forming a barrier layer on sections of the semiconductor body uncovered in the at least one contact hole, wherein the barrier layer is configured to inhibit the recombination center particles from diffusing out of the semiconductor body.

Forming recombination centers in a semiconductor device

A method of forming a metallization layer over a semiconductor substrate includes depositing a blanket layer of a diffusion barrier liner over an inter level dielectric layer, and depositing a blanket layer of an intermediate layer over the diffusion barrier liner. A blanket layer of a power metal layer including copper is deposited over the intermediate layer. The intermediate layer includes a solid solution of a majority element and copper. The intermediate layer has a different etch selectivity from the power metal layer. After depositing the power metal layer, structuring the power metal layer, the intermediate layer, and the diffusion barrier liner.

Intermediate layer for copper structuring and methods of formation thereof

A method for processing a semiconductor wafer in accordance with various embodiments may include: providing a semiconductor wafer including at least one chip and at least one kerf region adjacent to the at least one chip, the kerf region including at least one auxiliary structure; applying a mask layer to the semiconductor wafer; removing the at least one auxiliary structure in the at least one kerf region; removing the applied mask layer; and separating the semiconductor wafer along the at least one kerf region.

Methods for processing a semiconductor wafer

A method for separating semiconductor die includes forming a porous region on a semiconductor wafer and separating the die at the porous region using mechanical or other means.

Method of separating semiconductor die using material modification

Growing community of inventors

Wernberg, Austria

Petra Fischer