Nxp B.v.

Dsp Group Switzerland Ag

Petra Christina Anna Hammes

Stephan Jo Cecile Henri Theeuwen

Radjindrepersad Gajadharsing

Thomas Christian Roedle

Hendrikus Ferdinand Franciscus Jos

Freerk Van Rijs

Ivo Bernhard Pouwel

An electronic device comprising a field-effect transistor having an inter digitated structure suitable for high-frequency power applications, and having multiple threshold voltages that are provided in different regions of each a segment of the interdigitated structure. This leads to a dramatic improvement in linearity over a large power range in the back-off region under class AB signal operation.

Electronic device comprising a field effect transistor for high-frequency applications

The invention relates to in particular a lateral DMOST with a drain extension (). In the known transistor a further metal strip () is positioned between the gate electrode contact strip and the drain contact () which is electrically connected with the source region contact (). In the device proposed here, the connection between the further metal strip () and the source contact () comprises a capacitor () and the further metal strip () is provided with a further contact region () for delivering a voltage to the further metal strip (). In this way an improved linearity is possible and the usefulness of the device is improved in particular at high power and at high frequencies. Preferably the capacitor () is integrated with the transistor in a single semiconductor body (). The invention further comprises a method of operating a device () according to the invention.

Semiconductor transistor (DMOS) device for use as a power amplifier

The LDMOS transistor () of the invention is provided with a stepped shield structure () and/or with a first () and a second () drain extension region having a higher dopant concentration than the second drain extension region, and being covered by the shield.

Electric device comprising an LDMOS transistor

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Nijmegen, Netherlands

Petra Christina Anna Hammes