International Business Machines Corporation

Kabushiki Kaisha Toshiba

Freescale Semiconductors Inc.

Peter Zeitzoff

Charles W Koburger, Iii

Mariko Takayanagi

A method of forming a semiconductor device includes defining a first type region and a second type region in a substrate, t separated by one or more inter-well STI structures; etching and filling, in at least one of the first type region and the second type region, one or more intra-well STI structures for isolating semiconductor devices formed within a same polarity well, wherein the one or more inter-well STI structures are formed at a substantially same depth with respect to the one or more intra-well STI structures; implanting, a main well region, wherein a bottom of the main well region is disposed above a bottom of the one or more inter-well and intra-well STI features; and implanting, one or more deep well regions that couple main well regions, wherein the one or more deep well regions are spaced away from the one or more inter-well STI structures.

Deep well structures with single depth shallow trench isolation regions

A semiconductor device structure includes a first type region and a second type region defined in a substrate, the first type region and second type region separated by one or more inter-well shallow trench isolation (STI) structures. At least one of the first type region and the second type region has one or more intra-well STI structures formed therein for isolating semiconductor devices formed within a same polarity well. The inter-well STI structures are formed at a substantially same depth with respect to the intra-well STI structures. A main well region is formed such that a bottom of the main well region is disposed above a bottom of the inter-well and intra-well STI features. One or more deep well regions couple the main well regions otherwise isolated by the intra-well STI structures, wherein the deep well regions are spaced away from the inter-well STI structures.

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Albany, NY, United States of America

Peter Zeitzoff