Bayer Aktiengesellschaft

Deutsche Solar Gmbh

H.c. Starck Ceramics Gmbh & Co. Kg

Peter Woditsch

Ingo Schwirtlich

Peter Panek

Franz Hund

Gunter Buxbaum

Eckhard Bayer

Volker Hahnkamm

Heribert Stutgens

Klaus Kohler

Wolfgang Koch

Fritz Rodi

Ingo Pflugmacher

Gerhard Winter

Walter Gutsche

Horst Lange

Gunter Linde

Gunther Stollwerck

Hilmar Rieck

Klaus Nollen

Hans Sander

Werner Kannchen

Martin Abels

Hans J Rosenkranz

Jakob Rademachers

Peter Tacke

Heinrich Heine

Friedhelm Muller

Gunter Lailach

Gerhard Wötting

Karl-Heinz Schultz

Reinhard Thiel

Heinz-Peter Hemmerich

Ernst Gugel

Dieter Rade

Gunther Teichmann

Wolfgang Krumbe

Christian Hässler

Klaus Rohbock

Wolfgang Ritter

Henning Erfurth

Rudolf Wiemers

Walter Deissmann

Bernd Holle

Theodor Bohmann

Gunter Kurz

Christian H&auml;ssler

Kurt Hill

Wilhelm Schnell

Klaus Weber

Gerhard W&ouml;tting

Hans Andreas Lindner

Berthold Brazel

The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N2O) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage during production is less than 5% and the open porosity of the substrate is less than 15% vol. %. The invention also relates to a method for the production and use of said substrate as an element of semi-conductor components, particularly thin film solar cells, and semi-conductor components which contain said substrate.

Silicon nitride based substrate for semi-conductor components

Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.

Multicrystalline silicon having a low proportion of active grain borders

A sintered Si N material, valves and components made with the material, and methods for making same.

Sintered silicon nitride, components made therewith, specially valves, methods for the production and use thereof

The present invention relates to directionally solidified, arsenic- and/or antimony-containing, multicrystalline silicon, a process for the production thereof and its use, and to solar cells containing this silicon and a process for the production thereof.

Directionally solidified, multicrystalline silicon, a process for the

A process for the production of columnlarly solidified metallic bodies by melting metal and then solidifying said metal in a crucible, wherein the dissipation of heat is greater at the upper or lower end of the crucible than at the sides, which comprises supplying heat to the verticals sides through a heating element having a plurality of individually controlled heating sections in such a quantity that a melt of the metal is formed and then establishing directional solidification by establishing a temperature gradient by varying the heat output among the heating sections of the heating element by switching.

Process for the melting and directional solidification of metals

The process for producing silicon suitable for use in solar cells is improved by reacting a gaseous silicon compound with aluminum wherein a finely dispersed molten surface of pure aluminum or an aluminum/silicon alloy is intensively contacted with the gaseous silicon compound during the reaction.

Process for the production of solar silicon

Silicon having a low carbon content is produced by removing carbon from molten silicon by heating the molten silicon to temperatures of 1420.degree. to 1900.degree. C. and establishing a temperature gradient of 30.degree. to 400+ K. in the melt.

Process for the production of low carbon silicon

In the recrystallization and purification of a strip-shaped film of a metal or metalloid wherein one or more locally restricted melting zones are produced and are moved through the film, the improvement which comprises advancing the film, and melting it in zones which are transverse to the direction of advance of the strip-shaped film. Advantageously the film is melted by passing a current through a spirally wound coil which is placed near the film; the film is advantageously advanced in a plane so that the melt zones are diagonal relative to the film.

Strip-shaped films of metals, a process and an apparatus for the

A material resistant to high temperature melts of metal and salt which comprises a composite material containing silicon nitride, silicon oxynitride, silicon dioxide and silicon prepared by

Materials resistant to metal and salt melts, their production and their

In the production of a semi-conductor foil by solidification of a liquid semi-conductor on a horizontal support, the improvement which comprises positioning a molding body on the horizontal support, supplying the liquid semi-conductor to the molding body, and effecting relative movement between the molding body and support in a direction parallel to the support. Thereby fault-free silicon foils can readily be produced.

Process and apparatus for producing semi-conductor foils

A process for the production of columnarly grown blocks of silicon containing coarsely crystalline regions comprising cooling a silicon melt in a mold, selectively effecting solidification at the melt surface and advancing the solidification front downwardly. The blocks can be sawed into chips, useful for solar cells.

Process for the production of coarsely crystalline silicon

A process for the production of silicon comprising reacting a gaseous silicon compound of the formula SiH.sub.n X.sub.4-n, wherein X is halogen and n is 0 to 3, with aluminum in solid state. The resulting silicon can be highly pure and will have the particle size of the aluminum feed, making it especially useful for production of solar cells.

Process for the production of silicon

In the preparation of highly orientatable needle-shaped ferrimagnetic iron oxide particles by the reduction and reoxidation of needle-shaped particles of hydrated oxide of iron which have been surface treated against sintering the improvement which comprises effecting the surface treatment by applying to the particles of hydrated oxide of iron one layer of oxygen-containing anions and a further layer of polyvalent cations, each layer weighing about 0.02 to 2% by weight of the particle. Advantageously, the polyvalent cation-containing layer is applied between two oxygen-containing anion layers, the oxygen-containing anions used are selected from the group consisting of silicate, phosphate, borate, vanadate, molybdate and tungstate, the polyvalent cations used are selected from the group consisting of aluminum, chromium, manganese, iron and gallium, each layer weighs about 0.1 to 1% of the weight of the particles and before the reduction and reoxidation the surface treated particles of hydrated oxide of iron are tempered at a temperature of about 600.degree. to 900.degree. C.

Coating iron oxide particles for magnetic recording

An inorganically after-treated TiO.sub.2 pigment with a coating of hydrophobicizing and hydrophilicizing organic substances, which pigment comprises more than about 95% by weight of TiO.sub.2, shows a loss on annealing of less than about 0.8% (after subtraction of the carbon content) and has a grindometer value smaller than about 30, corresponding to a value of more than about 5.6 on the Hegman scale, is produced by micronizing a mixture of an inorganically after-treated TiO.sub.2 pigment, an untreated TiO.sub.2 pigment and hydrophobicizing and hydrophilicizing organic substances, the after-treated pigment being employed in about 1 to 40% by weight of total TiO.sub.2 pigment and the hydrophobicing and hydrophilicizing substances being employed in about 0.3 to 5% by weight of TiO.sub.2 pigment. The pigments are readily dispersible which simplifies their use in pigmenting lacquers, plastics and paper.

Readily dispersible TiO.sub.2 pigment

The production of titanium dioxide pigments with improved chalking resistance and gloss retention by coating with an oxide and/or phosphate of zirconium and of titanium, aluminum and/or silicon, the improvement which comprises coating with zirconium by adding to an aqueous alkaline suspension of the titanium dioxide pigment of alkali metal or ammonium zirconium carbonate complex and slowly precipitating the zirconium by adding a dissolved compound of at least one of titanium, aluminum, silicon and phosphorus.

Process for the production of titanium dioxide pigments with high

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Krefeld, Germany

Peter Woditsch