Asm IP Holding B.v.

Asm IP Holdings B.v.

Peter Westrom

Caleb Miskin

Loren R Jacobs

Amir Kajbafvala

Hyeongeu Kim

Dieter Pierreux

Bert Jongbloed

Joe Margetis

Rami Khazaka

Alexandros Demos

Steven Van Aerde

Kelly Houben

Yanfu Lu

Ali Moballegh

Xin Sun

Wilco Verweij

Yen Lin Leow

Tomas Hernandez Acosta

Omar Elleuch

Frederick Aryeetey

A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

Gas injection system and reactor system including same

A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing the plurality of substrates to a process chamber. A plurality of deposition cycles is executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial stack comprises a plurality of epitaxial pairs, wherein the epitaxial pairs each comprises a first epitaxial layer and a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer. Each deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer. The second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer. The first deposition pulse or the second deposition pulse further comprises a provision of a dopant precursor gas to the process chamber.

Method and wafer processing furnace for forming an epitaxial stack on a plurality of substrates

A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

Methods for silicon germanium uniformity control using multiple precursors

Methods for thermally calibrating reaction chambers are provided. In some embodiments, methods may include calculating a first correction factor of a first contact type temperature sensor within a first reaction chamber utilizing a first temperature sensor and applying the first correction factor to a first temperature controller to provide a first calibrated contact type temperature sensor. Embodiments may also include calculating a first calibration factor of a first non-contact type temperature sensor within the first reaction chamber utilizing the first calibrated contact type temperature sensor and applying the first calibration factor to the first non-contact type temperature sensor to provide a first calibrated non-contact type temperature sensor.

Methods for thermally calibrating reaction chambers

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Phoenix, AZ, United States of America

Peter Westrom