Infineon Technologies Ag

Infineon Technologies Bipolar Gmbh & Co. Kg

Nan Ya Technology Corporation

Qimonda Ag

Brita Gmbh

Brita Se

Peter Weidner

Reiner Barthelmess

Uwe Kellner-Werdehausen

Dirk Pikorz

Jens Przybilla

Pierre-Yves Guittet

Mario Schenk

Alexander Kasic

Michael Stelte

Markus Droldner

Dietmar Temmler

Uwe Wellhausen

Ulrich Mantz

Jochen Zöller

Barbara Schmidt

Bernd Freystedt

Berthold Conradt

Harald Bloess

Simon Floren

Peter Reinig

Christof Drilling

Harald Nübel

Thomas Nagel

Anita Klee

Zhen-Long Chen

Elke Gehring

Denis Razin

Alexej But

Thomas Hörning

André KÖHLER

Joris Buiter

Michael Bubinger

A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.

Short-circuit semiconductor component and method for operating it

A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.

Short-circuit semiconductor component and method for operating same

An apparatus includes an evaluating unit and a peak detection unit. The peak detection unit is configured to determine at least one peak parameter of a peak in a Fourier transformed reflection spectrum of infrared radiation reflected off a sample that may comprise trench structures. The evaluation unit is configured to determine from the at least one peak parameter and from a correction value containing information about an effective refractive index of the sample, a trench parameter of the trench structures.

Apparatus and method for determining trench parameters

In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

Method and apparatus for measuring a surface profile of a sample

An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths. Thus, rough sections in the trench profile may be identified without modeling.

Apparatus and method for monitoring trench profiles and for spectrometrologic analysis

The invention relates to a method for determination of the depth of depressions which are formed in a mount substrate. According to the invention, an essentially uniform layer of a wetting agent is applied, which contains depressions, on a surface of the mount substrate, a time profile of the decrease in weight of the mount substrate is recorded, and the recorded time profile of the decrease in weight of the mount substrate is evaluated. The invention also relates to a measurement apparatus.

Method and apparatus for determination of the depth of depressions which are formed in a mount substrate

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Rötz, Germany

Peter Weidner