Infineon Technologies Ag

Peter Wawer

Christoph Ludwig

Elard Stein Von Kamienski

Christoph Kutter

Kai Huckels

Reinhold Rennekamp

Georg Georgakos

Achim Gratz

Olaf Heitzsch

Jakob Kriz

Ayad Abdul-Hak

Konrad Wolf

Andreas Liebelt

Oliver Springmann

Mayk R&ouml;hrich

A nonvolatile NOR semiconductor memory device and a method for programming the memory device are described. The memory device has a multiplicity of one-transistor memory cells disposed in a matrix form being driven both via word lines and via bit lines. In this case, each one-transistor memory cell has both a source line and a drain line, as a result of which selective driving of the respective drain and source regions is obtained. In this way, a leakage current in the semiconductor memory device can be optimally reduced with minimal space requirement.

Nonvolatile nor semiconductor memory device and method for programming the memory device

A method for producing a non-volatile semiconductor memory cell with a separate tunnel window cell includes the step of forming a tunnel zone in a late implantation step by performing a tunnel implantation with the aid of a tunnel window cell as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles.

Method for fabricating a non-volatile semiconductor memory cell with a separate tunnel window

A process for producing a semiconductor configuration includes the steps of providing a semiconductor substrate, providing a buffer oxide layer on the semiconductor substrate and providing a hard mask on the buffer oxide layer. An STI trench is etched by using the hard mask and a liner oxide layer is provided in the STI trench. The hard mask is removed to expose the buffer oxide layer and the buffer oxide layer is removed by an etching process. The buffer oxide layer is etched more rapidly than the liner oxide layer in the etching process. A gate oxide layer is provided on the semiconductor substrate. A semiconductor configuration is also provided.

Semiconductor configuration and corresponding production process

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Dresden, Germany

Peter Wawer