Applied Materials, Inc.

Peter W Hey

Yezdi N Dordi

Robin W Cheung

Ashok K Sinha

Ratson Morad

Joseph Stevens

Avi Tepman

Dan A Marohl

Michael N Sugarman

Donald J Olgado

Daniel A Carl

Ho Seon Shin

Mark Robert Denome

Dan Carl

George Birkmaier

Eugene Ravinovich

David K Carlson

Liang-Yuh Chen

Roger N Anderson

Norma B Riley

Mahalingam Venkatesan

Paul F Smith

Mark Lloyd

Imran Hashim

Peijun Ding

Barry Lee Chin

Byung-Sung Kwak

Liang Light Chen

Radha Nayak

Anna Marie Lloyd, Legal Representative

The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

Electro-chemical deposition system

An apparatus and method is provided for analyzing or conditioning an electrochemical bath. One aspect of the invention provides a method for analyzing an electrochemical bath in an electrochemical deposition process including providing a first electrochemical bath having a first bath composition, utilizing the first electrochemical bath in an electrochemical deposition process to form a second electrochemical bath having a second bath composition and analyzing the first and second compositions to identify one or more constituents generated in the electrochemical deposition process. Additive material having a composition that is substantially the same as all or at least some of the one or more constituents generated in the electrochemical deposition process may be added to another electrochemical bath to produce a desired chemical composition. The constituents may be added at the beginning of the use of the bath to initially condition the electrochemical bath or may be added, preferably either continuously or periodically, during the electrochemical deposition process.

Method of conditioning electrochemical baths in plating technology

A method and apparatus for electrochemically depositing a metal into a high aspect ratio structure on a substrate are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a first conductive material disposed thereon in a processing chamber containing an electrochemical bath, depositing a second conductive material on the first conductive material as the conductive material is contacted with the electrochemical bath by applying a plating bias to the substrate while immersing the substrate into the electrochemical bath, and depositing a third conductive material in situ on the second conductive material by an electrochemical deposition technique to fill the feature. The bias may include a charge density between about 20 mA*sec/cm and about 160 mA*sec/cm . The electrochemical deposition technique may include a pulse modulation technique.

Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio

A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.

Gas inlets for wafer processing chamber

Embodiments of the invention generally provide an etchant mixing assembly for a semiconductor processing system. The etchant mixing assembly includes at least one acid source, at least one oxidizer source, a mixing tank selectively in fluid communication with the at least one acid source and the at least one oxidizer source, and a mixed etchant tank in fluid communication with the mixing tank. Additionally, a system controller configured to sense a low level of fluid in the mixed etchant tank, cause a fresh fluid solution to be mixed in the mixing tank, and cause the fresh fluid solution to the communicated to the mixed etchant tank is also provided in the etchant mixing assembly.

Apparatus with etchant mixing assembly for removal of unwanted electroplating deposits

One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer on the substrate using high density plasma physical vapor deposition; depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.

Method for achieving copper fill of high aspect ratio interconnect features

The present invention discloses a system that provides for electroless deposition performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimize oxidation. The system generally includes a mainframe having a mainframe substrate transfer robot, a loading station disposed in connection with the mainframe, one or more processing facilities disposed in connection with the mainframe, an electroless supply fluidly connected to the one or more processing applicators and optionally includes a spin-rinse-dry (SRD) station, a rapid thermal anneal chamber and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system.

In-situ electroless copper seed layer enhancement in an electroplating system

A system of supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to together define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.

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San Jose, CA, United States of America

Peter W Hey