Koninklijke Philips Corporation N.V.

U.S. Philips Corporation

Peter W Green

Ian D French

Stephen J Battersby

Martin John Powell

John R Hughes

Vega Murden

A method of constructing an active matrix pixel device uses a universal active matrix (UAM) comprising a matrix array of switching elements whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customization of the device. Using a common UAM enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

Active matrix pixel device construction method

A display substrate comprising a plate, for example a glass plate, on which display elements, e.g. pixels comprising pixel electrodes and thin-film-transistors, and an acoustic transducer, e.g. a microphone, speaker or buzzer, formed from thin film layers over a cavity, are formed. The cavity may be provided by powderblasting through the depth of the glass plate. The display substrate with integrated acoustic transducer may be incorporated in a display device, e.g. a liquid crystal display device. Also described is a discrete acoustic transducer, comprising a plate of an insulating material, a cavity in the plate, a plurality of layers that have been deposited on the plate, and a moveable member formed from the deposited layers and positioned over the cavity.

Display substrate and display device

An electronic device ( ) for mounting on a curved or flexible support ( ) and a method for fabrication of the same. The electronic device comprises a layer ( ) of rigid material having electronic components on its upper surface. Weakened regions ( ) of the rigid layer ( ) define contiguous portions of the rigid layer, and flexible connectors ( ) extend between components on different portions. The rigid layer ( ) can be fractured along the weakened regions ( ) to afford flexibility.

Fexible electronic device

A method of constructing an active matrix pixel device uses a universal active matrix (UAM) ( ) comprising a matrix array of switching elements ( ) whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes ( ) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM ( ) enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

Display having universal active matrix

The forward and reverse blocking voltage capability of a thyristor in accordance with the invention is substantially independent of the active thyristor area (Aa), thereby facilitating its design and its manufacture. This is achieved by means of a concentric arrangement of a deep inner lower-doped perimeter zone ( ) of the forward base region ( ) with a deep outer perimeter zone ( ) of the same conductivity type, doping profile and depth (A &equals;Axj). The outer perimeter zone ( ) brings the reverse blocking p-n junction ( ) to the front surface ( ) at a lateral distance (D ) around the forward blocking p-n junction ( ). The outer perimeter zone ( ) extends in depth to a lower perimeter zone ( ) of the underlying region ( ) that forms the reverse blocking junction with the high-resistivity base region ( ) of opposite conductivity type. All these perimeter zones ( ) together provide the thyristor with a deep peripheral termination which surrounds the active thyristor area (Aa). By making the inner and outer perimeter zones ( ) much deeper than the surrounded forward base region ( ), the forward and reverse blocking voltage capability of the thyristor is determined substantially independently of the doping of the forward base region ( ) and layout geometry of the N-P-N-P or N-P-N-P-N region structure in the active thyristor area (Aa). This doping and layout geometry can be chosen to give different magnitudes of transistor gain and different thyristor switching characteristics, all within the same peripheral termination. Current conduction in the lower-doped perimeter zone ( ) is less than in the highly-doped, highly-conductive base perimeter of prior-art planar thyristors and may even be pinched off from the active area (Aa), so easing the layout design of emitter-base shorts ( ) in the active area (Aa).

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Reigate, United Kingdom

Peter W Green