Centrotherm Photovoltaics Ag

Centrotherm International Ag

Peter Völk

Oliver Pursche

Thomas Pernau

Hans-Peter Elser

Wolfgang Jooss

Andreas Reichart

Olaf Romer

Wolfgang Scheiffele

The invention relates to methods and an apparatus for passivating defects of a semiconductor substrate, in particular a silicon based solar cell. According to the method, the substrate is irradiated with electromagnetic radiation during a first process phase, wherein the radiation directed onto the substrate has wavelengths at least in the region below 1200 nm and an intensity of at least 8000 Watt/m2. This can lead to a heating of the substrate, or a temperature control can be provided. Subsequently, the substrate is irradiated with electromagnetic radiation during a temperature-holding phase following the first process phase, wherein the radiation directed onto the substrate has wavelengths primarily in the region below 1200 nm and an intensity of at least 8000 Watt/m2, while a side of the substrate facing away from a source of the electromagnetic radiation is cooled via a contact with a support cooled by a cooling device.

Method and device for passivating defects in semiconductor substrates

The application describes an apparatus and a method for the thermal treatment of substrates, in particular thin film substrates for photovoltaic applications. The apparatus comprises at least one substrate carrier for supporting a substrate, a heating unit having at least one heating element for heating a substrate located on the substrate carrier and at least one heating element carrier for supporting the at least one heating element. The heating element carrier is designed to allow a local change in distance between the substrate carrier and the heating element, so as to be able to provide locally different heating intensities. In the method such a change in distance is carried out during the thermal treatment.

Apparatus and method for the thermal treatment of substrates

Growing community of inventors

Griesingen, Germany

Peter Völk