International Business Machines Corporation

Peter U Frasch

Friedrich W Schwerdt

Friedrich C Brunner

Theodor P Vogtmann

Dieter K Bahrle

Blanka Ivancic

Ursula Thelen

Markus A Zuegel

Wilfried Konig

Wolfgang Augstein

The invention relates to a method of adjusting the edge angle of openings that are etched in a polysilicon layer. The steepness of the edge angles can be adjusted by means of a treatment of the polysilicon layer prior to the making of the photoresist mask with a mixture of 5 parts water and 1 to 3 parts ammonia and 0.25 to 1 part hydrogen peroxide. This pre-treatment is advantageously carried out at a temperature between 40.degree. and 70.degree. C.

Method of adjusting the edge angle in polysilicon

A method of improving the adherence of conductive metallic lines to a polyimide resin layer by incompletely curing the polyimide resin prior to deposition of the metal layer, and subsequently completely curing the polyimide resin layer after the metal layer is deposited.

Method of improving the adherence of metallic conductive lines on

A composition for etching polyimide based polymers comprised of a tetraalkyl ammonium hydroxide and an organic acid selected from the group of acetic acid, tartaric acid and oxalic acid. The etchant may be used to texture polyimide films or form perforations through polyimide substrates or layers, particularly in the fabrication of printed circuits and semiconductor devices where via holes are required for interconnection of circuitry.

Etchant for polyimides

Method of coating oxidized inorganic substrates with polyimide

Growing community of inventors

Boeblingen, Germany

Peter U Frasch