X-Fab Semiconductor Foundries Gmbh

Peter Tilo

Roy Knechtel

Stefan Weinberger

Methods for the production of a semiconductor device are disclosed. In one embodiment, a method may include: () mechanically contacting a first substrate () having a semiconductor material to a second substrate () having a bondable passivation material and contact vias () extending through the bondable passivation material; () covering the contact vias () with an at least high-resistance material () on a side facing away from the first substrate (); () applying an electric potential between the at least high-resistance material and the first substrate. The potential has a sufficient level that is functionally sufficient to initiate a bonding process between the bondable passivation material of the second substrate and the semiconductor material of the first substrate.

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Itzehoe, Germany

Peter Tilo