Osram Opto Semiconductors Gmbh

Peter Strauß

Tobias Meyer

Philipp Drechsel

Alvaro Gomez-Iglesias

Asako Hirai

Bastian Galler

Anna Nirschl

Tobias Niebling

An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.

Optoelectronic semiconductor chip

Growing community of inventors

Wuppertal, Germany

Peter Strauß