International Business Machines Corporation

Other

Peter Stevens Locke

Cyprian Emeka Uzoh

Panayotis Constantinou Andricacos

James Edward Fluegel

Erick G Walton

Keith Thomas Kwietniak

Hariklia Deligianni

Kenneth Parker Rodbell

Dean S Chung

Daniel C Edelstein

Cyril Cabral, Jr

Soon-Cheon Seo

Kevin Shawn Petrarca

Andrew Herbert Simon

Richard Paul Volant

Seshadri Subbanna

Lynne Marie Gignac

Wilma Jean Horkans

William E Corbin, Jr

Subramanian Srikanteswara Iyer

Sandra Guy Malhotra

Jonathan David Reid

Kwong Hon Wong

Fenton Read McFeely

Paul Christian Parries

Evan E Patton

Kenneth John Giewont

Darryl D Restaino

Christopher Carr Parks

John Jacob Yurkas

Patrick William Dehaven

Yuet-Ying Yu

John Owen Dukovic

James Patrick Norum

Steven H Boettcher

Philippe Mark Vereecken

David M Rockwell

Josef W Korejwa

Cheryl Faltermeier

Bosang Kim

Jeffrey Lloyd

Kent Way

W Jean Horkans

Lara Sandra Collins

Lawrence Bauer, Jr

An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.

Void-free damascene copper deposition process and means of monitoring thereof

Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 &#x3bc;m and via openings filled with electroplated copper than is substantially free of internal seams or voids.

Electroplated copper interconnection structure, process for making and electroplating bath

The integrity of a liner in an interconnect structure or other layer in an integrate circuit is tested in a short time by exposing the liner to a reactive gas that attacks the underlying silicon or other material behind the liner. A weak spot in the liner permits the gas to react with the silicon, which produces a visible area that can be readily identified. The test can be performed in a few hours, in contrast to a period of several months required to complete the process, package the circuit and conduct a burn-in test.

Early detection of contact liner integrity by chemical reaction

A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0&#xb0; C. and about 18&#xb0; C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than &#x2153; or as high as 1/10. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process. These parameters include the bath temperature, the bath agitation, the additive concentration in the plating bath, the plating current density utilized, the deposition rate of the copper film and the total thickness of the copper film deposited.

Method for plating copper conductors and devices formed

The present invention relates to a method and apparatus for ensuring uniform and reproducible heating of a deformation-tolerant substrate during low-pressure chemical vapor deposition (CVD) of a metal film on a surface of the substrate. The uniform and reproducible heating of the substrate is achieved in the present invention by positioning the substrate on a beveled surface of a chamfered ring which is located above the heating element in a CVD reactor chamber. The space between heating element, chamfered ring and bottom surface of the substrate define a cavity between the substrate and heating element that ensures that the substrate is heated by radiative means rather than direct contact.

Method for depositing metal films onto substrate surfaces utilizing a chamfered ring support

An electrodeposition apparatus for depositing material on a surface of a substrate. The electrodeposition apparatus includes at least one contact for vertically contacting the substrate and providing electrical connection to the substrate. The at least one contact does not scratch the surface of the substrate to be plated. A voltage source is connected to the at least one contact.

Electroplating apparatus with vertical electrical contact

A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80&deg; C. to about 130&deg; C. Metal is plated on the seedlayer.

Seedlayer for plating metal in deep submicron structures

Organic addition agents in copper plating baths are monitored by diluting a sample of the bath with sulfuric acid and hydrochloric acid and optionally a cupric salt. The diluting provides a bath having conventional concentrations of cupric ion, sulfuric acid and hydrochloric acid; and adjusted concentrations of the organic addition agents of 1/X of their original values in the sample; where X is the dilution factor. CVS techniques are used to determine concentrations of organic addition agents.

Method of controlling additives in copper plating baths

A method for controlling the composition of a chemical bath in which predictive dosing is used to account for changes in the composition of the bath in which the operating characteristics of the process are partitioned into a plurality of operating modes and the consumption or generation of materials related to the process are determined empirically and additions of material are made as appropriate.

Method of controlling chemical bath composition in a manufacturing environment

A method for forming a structure. A first dielectric material is deposited on a substrate. The first dielectric material is patterned. At least one metal is deposited in and on the first dielectric material. Portions of the at least one metal are removed at least in a region above an upper surface of the first dielectric material. The first dielectric material is removed. A second dielectric material is provided in place of first dielectric material.

Method to build multi level structure

A method is described for electroplating a metal structure in a feature formed in a substrate. A seed layer of the metal is deposited on the top surface and on the bottom and sidewalls of the feature. The seed layer is then selectively removed from the top surface, so that only a portion of the seed layer remains in the feature on at least the bottom thereof. The metal is then electroplated using this portion of the seed layer, so that the metal fills the feature. The removal of the seed layer from the top surface causes no electroplating to occur on the top surface.

Selective plating process

A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0&deg; C. and about 18&deg; C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than &frac13; or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process. These parameters include the bath temperature, the bath agitation, the additive concentration in the plating bath, the plating current density utilized, the deposition rate of the copper film and the total thickness of the copper film deposited.

A process for the electrolytic deposition of a metal, preferably copper or an alloy of copper, directly onto a barrier layer coated on a dielectric layer. The process is advantageous because it electrolytically deposits metal in a pattern that is either the duplicate of a first conductive pattern under the dielectric or the inverse image of the first conductive pattern, depending on the first conductive pattern shape. Thus, metal is deposited on the barrier layer duplicating a first conductive pattern under the dielectric layer when the first pattern is a serpentine pattern and the metal deposits in the spaces between the conductive lines of a first conductive pattern of a discrete passive element such as a spiral.

Pattern-sensitive electrolytic metal plating

Copper is plated onto a substrate by plating a layer of copper onto the substrate to provide a maximum thickness of about 350 nanometers, followed by subjecting the copper coated substrate to an oxygen containing gaseous ambient in order to roughen the copper surface. Next, a second layer of copper is electroplated onto the structure to provide the desired thickness. The texture of the second layer of copper is independent of the underlayer of copper and has a random or at least substantially random texture.

Method for controlling the texture and microstructure of plated copper and plated structure

A method of reducing etching of a seed layer by a plating solution. Prior to introducing the semiconductor wafer with the seed layer into the plating solution, the etching power of the plating solution is diminished.

Method of improving contact reliability for electroplating

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Hopewell Junction, NY, United States of America

Peter Stevens Locke