Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Peter Stauss

Philipp Drechsel

Korbinian Perzlmaier

Erwin Lang

Tansen Varghese

Matthias Peter

Marc Philippens

Werner Bergbauer

Klaus Streubel

Petrus Sundgren

Andreas Biebersdorf

Bruno Jentzsch

Christian Mueller

Julia Stolz

Ruth Boss

Frank Singer

Siegfried Herrmann

Ralph Wirth

Stefan Illek

Walter Wegleiter

Patrick Rode

Andreas Ploessl

Tobias Meyer

Sebastian Wittmann

Ines Pietzonka

Jens Mueller

Wilhelm Stein

Juergen Off

Kerstin Neveling

Berthold Hahn

Alexander F Pfeuffer

Martin Rudolf Behringer

Joachim Hertkorn

Gudrun Diepold

Reiner Windisch

Norbert Linder

Arndt Jaeger

Alexander Walter

Thomas Lehnhardt

Werner Kuhlmann

Alexander Tonkikh

Frank Baumann

Asako Hirai

Christian Karnutsch

Mark Hampel

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

U-LED, U-LED device, display and method for the same

μ-LED, μ-LED device, display for augmented reality or lighting applications

μ-LED, μ-LED device, display and method for the same

A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.

Radiation-emitting semiconductor body and method of producing a semiconductor layer sequence

The invention relates to a component () having a semiconductor layer sequence, which has a p-conducting semiconductor layer (), an n-conducting semiconductor layer (), and an active zone () arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers () having intermediate quantum well layers () and a plurality of n-side barrier layers () having intermediate quantum layers (). Recesses () having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

Component having a multiple quantum well structure

What is specified is a method for producing a layer structure () as a buffer layer of a semiconductor component, said method comprising the following steps: a) provision of a carrier (), which has a silicon surface (), b) deposition of a first layer sequence (), which comprises a seeding layer () containing aluminum and nitrogen, on the silicon surface () of the carrier () along a stacking direction (H) running perpendicular to a main plane of extent of the carrier (), c) three-dimensional growth of a 3D-GaN layer (), which is formed with gallium nitride, on a top surface () of the first layer sequence () which is remote from the silicon surface (), d) two-dimensional growth of a 2D-GaN layer (), which is formed with gallium nitride, on the outer surfaces () of the 3D-GaN layer () which are remote from the silicon surface ().

Method for producing a layer structure as a buffer layer of a semiconductor component and layer structure as a buffer layer of a semiconductor component

An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.

Optoelectronic component with a layer structure

A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlInGaN with 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1 and x+y&#x2266;1, is grown onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.

Method for producing a nitride compound semiconductor device

A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.

Method for producing a light-emitting diode

A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminum-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.

Method for producing an optoelectronic nitride compound semiconductor component

A luminous means () including at least one optoelectronic semiconductor device () which emits electromagnetic radiation during operation at at least one first wavelength (L) and at at least one second wavelength (L), wherein the first wavelength (L) and the second wavelength (L) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means () includes at least one conversion means () which converts the first wavelength (L) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means () during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.

Thermal light source having a high color rendering quality

A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals, at least one detector element comprises a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region, the radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector, a channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.

Radiation detector

An optoelectronic semiconductor chip is specified, which has an active zone () containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (). The multi quantum well structure comprises at least one first quantum well layer (), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers () adjoining the first quantum well layer. It comprises a second quantum well layer (), which is undoped and is arranged between two barrier layers () adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (), which is undoped and which is arranged between two undoped barrier layers () adjoining the third quantum well layer.

Optoelectronic semiconductor chip having a multiple quantum well structure

The invention concerns an optoelectronic component comprising a layer stack that includes at least two active zones and a carrier that is applied to the layer stack. The invention further concerns a method of fabricating such an optoelectronic component.

Optoelectronic component and method of fabricating same

A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Method for fabricating a component having an electrical contact region

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Wuppertal, Germany

Peter Stauss