Osram Opto Semiconductors Gmbh

Peter Stauß

Alvaro Gomez-Iglesias

Tobias Meyer

Philipp Drechsel

Asako Hirai

Bastian Galler

Anna Nirschl

Mohammad Tollabi Mazraehno

Tobias Niebling

A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlGaInN with 0&#x2264;n&#x2264;1, 0&#x2264;m&#x2264;1 and n+m&#x3c;1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.

Component for detecting UV radiation and method for producing a component

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.

Optoelectronic semiconductor chip

Growing community of inventors

Wuppertal, Germany

Peter Stauß