Cree Gmbh

Creeled, Inc.

Cree Microwave, Inc.

Loh, Ban P.

Andrews, Peter S.

Peter Scott Andrews

Jesse Colin Reiherzer

Christopher P Hussell

John Adam Edmond

Gerald H Negley

David T Emerson

David Beardsley Slater, Jr

Bernd P Keller

James Ibbetson

Matthew Donofrio

Jeffrey Carl Britt

Kurt S Wilcox

Joseph Gates Clark

Eric J Tarsa

Ban Poh Loh

Amber Christine Abare

Michael P Laughner

Bradley E Williams

Kevin Haberern

Colin Kelly Blakely

Michael S Leung

Raymond Rosado

Anwar Mohammed

Scott Thomas Allen

Sung Chul Joo

Thomas Goldthwaite Coleman

Norbert Hiller

Jayesh Bharathan

Florin A Tudorica

Mark Raffetto

Theodore D Lowes

Erin R F Welch

Nicholas W Medendorp

Derek Miller

Erin Welch

Jack Vu

Antony Paul Van De Ven

Nicholas William Medendorp, Jr

Ronan P Le Toquin

Jasper S Cabalu

Kyle Damborsky

Steven Wuester

Ted Lowes

Michael John Bergmann

Praneet Jayant Athalye

John Wesley Durkee

Hua-Shuang Kong

David N Randolph

Ronan P LeToquin

Christopher D Strom

Amber Christine Salter

Troy Gould

Brad Williams

Michael T Bruhns

Jeff LaHaye

Brian Thomas Collins

Robert Wilcox

Robert D Underwood

Ronan Letoquin

David Suich

Joshua J Markle

Kenneth Morgan Davis

Sarah Trinkle

Mark McClear

Mark Cash

Arthur F Pun

Maryanne Becerra

Roshan Murthy

Yankun Fu

Fan Zhang

Justin White

Hua Shuang Kong

Alan Wellford Dillon

Harsh Sundani

Andrew Signor

Deborah Kircher

Tao Feng Gilbert

Mark McOlear

Nicholas W Mendendorp, Jr

Shaow B D Lin

Elbert Brown

David Der Chi Chang

Howard Nordby

Thodore Lowes

Luis Adames

David Todd Emerson

David Slater

Jr David B Slater

Michael Leung

Michael 8F/A Tower 2 Harbourfront Landmark Leung

Bernard P Keller

David B Slater

Pixelated-LED chips include substrate sidewalls with sidewall involutions and/or increased sidewall surface area regions to affect light extraction therefrom. A LED lighting device incorporates a superstrate that supports lumiphoric material and includes sidewalls with sidewall involutions and/or increased sidewall surface area regions. Methods for fabricating sidewall features may include etching (e.g., deep etching) of substrate or superstrate materials, such as by using an etch mask having edges with non-linear shapes to produce and/or enhance sidewall involutions when an etchant is supplied through the etch mask to selectively consume substrate or superstrate material.

LED chips and devices with textured light-extracting portions, and fabrication methods

Light emitting diodes, components, and related methods, with improved performance over existing light emitting diodes. In some embodiments, light emitter devices included herein include a submount, a light emitter, a light affecting material, and a wavelength conversion component. Wavelength conversion components provided herein include a transparent substrate having an upper surface and a lower surface, and a phosphor compound disposed on the upper surface or lower surface, wherein the wavelength conversion component is configured to alter a wavelength of a light emitted from a light source when positioned proximate to the light source.

Light emitting diodes, components and related methods

LED chips and related fabrication methods are disclosed. A LED chip includes an active layer arranged on or over a light-transmissive substrate having a light extraction surface. The light extraction surface comprises a microtextured etched surface having a non-repeating, irregular textural pattern (e.g., with an average feature depth in a range of from 120 nm to 400 nm, and preferably free of any plurality of equally sized, shaped, and spaced textural features). The microtextured etched surface may be formed by applying a micromask having first and second solid materials of different etching rates over the light extraction surface, and exposing the micromask to an etchant (e.g., via reactive ion etching) to form a microtextured etched surface having a non-repeating, irregular textural pattern. Lumiphoric material may be applied over the microtextured surface.

LED chips with irregular microtextured light extraction surfaces, and fabrication methods

A light emitting device includes a LED having a light emitting first surface and a light emitting second surface that define a corner. A support layer is disposed to receive light emitted by the light emitting second surface and is disposed adjacent the corner. A luminophoric medium layer at least partially covers the light emitting first surface and the light emitting second surface where the luminophoric medium layer is at least partially supported by the support layer to prevent a narrowing of the luminophoric medium layer.

Solid-state light emitting device with improved color emission

A pixelated-LED chip includes an active layer with active layer portions, segregated by streets, that are configured to illuminate different light-transmissive substrate portions to form pixels. A light extraction surface of each substrate portion includes protruding features and light extraction surface recesses that may be formed by sawing. Underfill material may be provided between a pixelated-LED chip and a mounting surface, as well as between pixels and between anodes and cathodes thereof. Certain implementations provide light extraction surface recesses that are non-parallel to each street defined through the active layer. Certain implementations provide light extraction surface recesses that are non-aligned with (e.g., non-parallel to) anode-cathode boundaries of each anode-cathode pair. Such arrangements reduce a likelihood of cracking in portions of a pixelated-LED chip. Methods for fabricating pixelated-LED chips are also provided.

Texturing for high density pixelated-LED chips and chip array devices

At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

High density pixelated LED and devices and methods thereof

Pixelated-LED chips and related methods are disclosed. A pixelated-LED chip includes an active layer with independently electrically accessible active layer portions arranged on or over a light-transmissive substrate. The active layer portions are configured to illuminate different light-transmissive substrate portions to form pixels. Various enhancements may beneficially provide increased contrast (i.e., reduced cross-talk between pixels) and/or promote inter-pixel illumination homogeneity, without unduly restricting light utilization efficiency. In some aspects, an underfill material with improved surface coverage is provided between adjacent pixels of a pixelated-LED chip. The underfill material may be arranged to cover all lateral surfaces between the adjacent pixels. In some aspects, discontinuous substrate portions are formed before application of underfill materials. In some aspects, a wetting layer is provided to improve wicking or flow of underfill materials during various fabrication steps. Other technical benefits may additionally or alternatively be achieved.

Pixelated-LED chips and chip array devices, and fabrication methods

Pixelated-LED chips including a plurality of independently electrically accessible active layer portions supported by a plurality of discontinuous substrate portions to form a plurality of pixels, with underfill material of varying composition provided between sidewalls of adjacent pixels. Underfill materials having different reflection, scattering, absorption, filtering, etch-resistance, and/or light refraction properties may be provided in multiple layers. A method for fabricating a pixelated-LED chip includes defining streets through an active layer and portions of a substrate to form active layer portions, thinning an entire upper portion of a substrate to create openings into the streets and form discontinuous substrate portions bounding the streets, and supplying underfill material through the openings into the streets.

Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods

Pixelated-LED chips and related methods are disclosed. A pixelated-LED chip includes an active layer with independently electrically accessible active layer portions arranged on or over a light-transmissive substrate. The active layer portions are configured to illuminate different light-transmissive substrate portions to form pixels. Various enhancements may beneficially provide increased contrast (i.e., reduced cross-talk between pixels) and/or promote inter-pixel illumination homogeneity, without unduly restricting light utilization efficiency. In some aspects, a light extraction surface of each substrate portion includes protruding features and light extraction surface recesses. Lateral borders between different pixels are aligned with selected light extraction surface recesses. In some aspects, selected light extraction surface recesses extend through an entire thickness of the substrate. Other technical benefits may additionally or alternatively be achieved.

High density pixelated-LED chips and chip array devices

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly packaged LEDs with light-altering materials are disclosed. A light-altering material is provided in particular configurations within an LED package to redirect light from an LED chip within the LED package and contribute to a desired emission pattern of the LED package. The light-altering material may also block light from the LED chip from escaping in a non-desirable direction, such as large or wide angle emissions. The light-altering material may be arranged on a lumiphoric material adjacent to the LED chip in various configurations. The LED package may include an encapsulant on the light-altering material and the lumiphoric material.

Light-emitting diode package with light-altering material

An apparatus and associated method for high speed and/or mass transfer of electronic components onto a substrate comprises transferring, using an ejector assembly, electronics components (e.g., light emitting devices) from a die sheet onto an adhesive receiving structure to form a predefined pattern including electronic components thereon, and then transferring the electronic components defining the predefined pattern onto a substrate (e.g., a translucent superstrate) for light emission therethrough to create a high-density (e.g., high resolution) display device utilizing, for example, mini- or micro-LED display technologies.

Apparatus and methods for mass transfer of electronic die

Light emitting diodes are disclosed that utilize multiple conversion materials in the conversion process in order to achieve the desired emission color point. Different embodiments of the present invention can comprise different phosphor types in separate layers on, above or around one or a plurality of LED chips to achieve the desired light conversion. The LEDs can then emit a desired combination of light from the LED chips and conversion material. In some embodiments, conversion materials can be applied as layers of different phosphor types in order of longest emission wavelength phosphor first, followed by shorter emission phosphors in sequence as opposed to applying in a homogeneously mixed phosphor converter. The conversion material layers can be applied as a blanket over the LED chips and the area surrounding the chip, such as the surface of a submount holding the LED chips.

Multi-layer conversion material for down conversion in solid state lighting

Solid-state light emitting devices including light-emitting diodes (LEDs), and more particularly packaged LEDs are disclosed. LED packages are disclosed that include an LED chip with multiple discrete active layer portions mounted on a submount. The LED packages may further include wavelength conversion elements and light-altering materials. The multiple discrete active layer portions may be electrically connected in series, parallel, or in individually addressable arrangements. The LED chip with the multiple discrete active layer portions may provide the LED package with improved brightness, improved alignment, simplified manufacturing, and reduced costs.

Solid-state light emitting devices including light emitting diodes in package structures

Substrate based light emitter devices, components, and related methods are disclosed. In some aspects, light emitter components can include a substrate and a plurality of light emitter devices provided over the substrate. Each device can include a surface mount device (SMD) adapted to mount over an external substrate or heat sink. In some aspects, each device of the plurality of devices can include at least one LED chip electrically connected to one or more traces and at least one pair of bottom contacts adapted to mount over a surface of external substrate. The component can further include a continuous layer of encapsulant disposed over each device of the plurality of devices. Multiple devices can be singulated from the component.

Substrate based light emitter devices, components, and related methods

Growing community of inventors

Durham, NC, United States of America

Peter Scott Andrews