Samsung Electronics Co., Ltd.

Leland Stanford Junior University

Peter Schindler

Ki-Hyun Kim

Friedrich B Prinz

Stephen P Walch

Yongmin Kim

Andrei Teodor Iancu

Jinsung Kang

Takane Usui

Michael C Langston

John Provine

Youngdong Lee

Hyo Jin Kim

Sam Hyung Sam Kim

A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.

Semiconductor devices including electrically isolated patterns and method of fabricating the same

Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.

Method of forming thin film of semiconductor device

Growing community of inventors

Stanford, CA, United States of America

Peter Schindler