Advanced Technology Materials, Inc.

Texas Instruments Corporation

Other

Peter S Kirlin

Robin A Gardiner

Thomas H Baum

Brian A Vaartstra

Timothy E Glassman

Duncan W Brown

Scott Robert Summerfelt

Sofia Pombrik

Bruce E Gnade

Peter C Van Buskirk

Gregory T Stauf

Douglas J Gordon

Howard R Beratan

James V McManus

Peter Van Buskirk

Glenn M Tom

Frank DiMeo, Jr

Robin L Binder

Brian A Vaarstra

Jiming Zhang

Connie L Gordon, Legal Representative

Gautam Bhandari

Michael A Tischler

Charles P Beetz

Steven J Hultquist

Dennis F Brestovansky

Douglas Cameron Gordon

Paul McIntryre

Sophia Pombrik

Brian A Vaastra

Thomas W Baum

Phillip Chen

A &#x3b2;-diketonate alkoxide metal compound and a source reagent composition are provided. The &#x3b2;-diketonate alkoxide metal compound may include a metal M selected from Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, Lu, Th, Pd, Pt, Ga, In, Au, Ag, Li, Na, K, Rb, Cs, Mo, and Yb. The metal may be complexed to at least one alkoxide ligand and one &#x3b2;-diketonate ligand.

Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition

A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C-Calkenyl, C-Ccycloalkenyl and C-Caryl.

A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.

Plasma-assisted dry etching of noble metal-based materials

A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF , SF , SiF , Si F or SiF and SiF radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.

Isotropic dry cleaning process for noble metal integrated circuit structures

A dynamic random access memory device (,) includes storage capacitors using a high dielectric constant material, such as, BaSrTiO,, SrBi,Ta,O,and PbZrTiO,, for the capacitors' insulator. The device includes a conductive plug (,) formed over and connecting with a semiconductor substrate (,). A buffer layer (,) of titanium silicide lays over the plug, and this layer serves to trap &ldquo;dangling&rdquo; bonds and to passivate the underlying surface. A first diffusion barrier layer (,), e.g., titanium aluminum nitride, covers the titanium silicide. A capacitor first electrode (,) lays over the diffusion barrier layer. The high dielectric constant material (,) is laid over the capacitor first electrode. A capacitor second electrode (,) is laid over the high dielectric constant material. A second diffusion barrier layer (,) is deposited on the capacitor second electrode. A conductor, such as aluminum (,), is laid over the second diffusion barrier layer. An isolation dielectric (,) can be deposited over the conductor at a high temperature without causing oxygen or metallic diffusion through the first and second diffusion barrier layers.

Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same

A process for fabricating an electronic device structure on or in a substrate. A storage and dispensing vessel is provided, containing a solid-phase physical sorbent medium having physically adsorbed thereon a fluid for fabrication of the electronic device structure, e.g., a source fluid for a material constituent of the electronic device structure, or a reagent such as an etchant or mask material which is utilized in the fabrication of the electronic device structure but does not compose or form a material constituent of the electronic device structure. In the process, the source fluid is desorbed from the physical sorbent medium and dispensing source fluid from the storage and dispensing vessel, and contacted with the substrate, under conditions effective to utilize the material constituent on or in the substrate. The contacting step of the process may include process steps such as ion implantation; epitaxial growth; plasma etching; reactive ion etching; metallization; physical vapor deposition; chemical vapor deposition; cleaning; doping; etc. The process of the invention may be employed to fabricate electronic device structures such as transistors; capacitors; resistors; memory cells; dielectric material; buried doped substrate regions; metallization layers; channel stop layers; source layers; gate layers; drain layers; oxide layers; field emitter elements; passivation layers; interconnects; polycides; electrodes; trench structures; ion implanted material layers; via plugs; precursor structures for the foregoing electronic device structures; and device assemblies comprising more than one of the foregoing electronic device structures. The electronic device structure fabricated by such process may in turn may be employed as a component of an electronic product such as a telecommunications device or electronic appliance.

Apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing sorbent-based fluid storage and dispensing system for reagent delivery

A platinum source reagent liquid solution, comprising: (i) at least one platinum source compound selected from the group consisting of compounds of the formulae:

Platinum source compositions for chemical vapor deposition of platinum

A sorbent-based gas storage and dispensing system, including a storage and dispensing vessel containing a solid-phase physical sorbent medium having a sorbate gas physically adsorbed thereon. A chemisorbent material is provided in the vessel to chemisorb the impurities for gas phase removal thereof in the storage and dispensing vessel. Desorbed sorbate gas is discharged from the storage and dispensing vessel by a dispensing assembly coupled to the vessel. The chemisorbent may be provided in a capsule including an impurity-permeable, but sorbate gas-impermeable membrane, and installed in the vessel at the time of sorbent material loading. Semiconductor manufacturing processes and products manufactured by such processes are described.

Sorbent-based gas storage and delivery system for dispensing of

Metal complex source reagents for chemical vapor deposition

A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:

Method of forming metal films on a substrate by chemical vapor deposition

An integrated circuit capacitor in which a first conductive plate, a layer of ferroelectric material, and a second conductive plate are deposited and formed in sequence. Thereafter a diffusion barrier material and an insulative material are deposited either as a layered dielectric stack with alternating layers of the diffusion barrier material and the insulative material with tensile and compressive stresses in the alternating layers offsetting one another, or as a graded diffusion barrier material varying from a binary oxide of Ta, Nb, or Zr at the surface of the ferroelectric material to SiO.sub.2 at a distance above the surface of the ferroelectric material.

Ferroelectric capacitor and integrated circuit device comprising same

A capacitive structure on an integrated circuit and a method of making the same are disclosed, which is particularly useful in random-access memory devices. Generally, the method of the present invention comprises the steps of forming a substantially vertical temporary support 54 (preferably by forming a cylindrical aperture in an insulating layer) on a semiconductor substrate 10 and forming a substantially vertical dielectric film 32 (preferably a high dielectric constant perovskite-phase dielectric film, and more preferably barium strontium titanate) on temporary support 54. The method further comprises depositing a first conductive (e.g. platinum) electrode 60 on substantially vertical dielectric film 32, and subsequently replacing temporary support 54 with a second conductive (e.g. platinum) electrode 64, such that a thin film capacitor 44 which is substantially vertical with respect to substrate 10 is formed. The entire capacitor is essentially self-aligned, such that some embodiments require only one lithography step to complete the capacitor. Also, an advantage of this method is that a high temperature, high oxygen activity dielectric deposition may be completed prior to formation of either electrode, thus greatly simplifying both electrode structure and processing.

Method of forming sidewall capacitance structure

Solid-phase physical sorbent medium holding adsorbed fluid is provided in a cartridge, for use in a sorbent-based fluid storage and dispensing system. One or more of such cartridges may be disposed in a fluid storage and dispensing vessel and opened prior or subsequent to sealing of the vessel, to provide desorbable fluid for dispensing from the vessel, e.g., by pressure differential, concentration differential and/or thermal desorption. Use of such cartridges thereby obviates the sorbent bake-out and sorbate gas loading steps necessary in prior practice, thereby simplifying the manufacture of the fluid storage and dispensing system.

Sorbent-based fluid storage and dispensing vessel with replaceable

A method of fabricating a ferroelectric capacitor structure by sequentially depositing a bottom electrode layer, a ferroelectric layer and a top electrode layer on a base structure, optionally with deposition of a layer of a conductive barrier material beneath the bottom electrode layer, to form a capacitor precursor structure, and planarizing the capacitor precursor structure by chemical mechanical polishing to yield the ferroelectric capacitor structure, e.g., a stack capacitor or trench capacitor. The process is carried out without dry etching of the electrode layers or dry etching of the ferroelectric layer, to yield ferroelectric capacitors having a very small feature size, as for example between 0.10 and 0.20 .mu.m.

Chemical mechanical polishing of FeRAM capacitors

A fluid storage and dispensing system includes a storage and dispensing vessel containing a solid-phase physical sorbent material for holding a sorbable fluid, and a motive transport assembly associated with the storage and dispensing vessel. The storage and dispensing vessel is arranged for selectively flowing fluid into the vessel for storage, and out of the vessel for dispensing. The sorbable fluid physically adsorbed on the solid-phase physical sorbent medium may be selectively desorbed by pressure differential desorption and/or thermal desorption, to dispense gas when the vessel is in motive transport and/or when the vessel is at rest.

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Bethel, CT, United States of America

Peter S Kirlin