Siemens Aktiengesellschaft

Peter Rydval

Ulrich Schwabe

Ronald Rathbone

A system for contactless power and data transmission contains a stationary station and a mobile station. In order to tune a resonant circuit of the mobile station to the resonant frequency of the stationary station, a multiplicity of capacitors which can be connected in parallel with the resonant circuit are provided. An instantaneous operating state of the system is included in the tuning. The realization is easy to integrate.

System for contactless power and data transmission

Integrated digital semiconductor circuit, including a plurality of inputs, a common constant-current source for selectively supplying the inputs, the inputs being operable in a '1' logic level state and a '0' logic level state, internal switching means for switching the inputs to a first operating state of the common constant-current source in which all of the inputs are at the '0' level and to a second operating state of the common constant-current source in which a given number of the inputs are at the '1' level and the other of the inputs are at the '0' level, a resistor being connected between the common constant-current source and each of the inputs, each of the resistors being identical to each other and being constructed in dependence on the first and second operating states of the common constant-current source.

Integrated digital semiconductor circuit

A monolithic, integrated ECL circuit, e.g., a decoder circuit for bipolar semiconductor stores, wherein a current supply transistor for the current supply of two digital stages is provided under the control of a semiconductor switching element which possesses two determinate switching states. In the first switching state of the semiconductor switching element one digital stage is connected to the current supply transistor and in the second switching state the other digital stage is connected to the current supply transistor.

Monolithic digital semiconductor circuit comprising a plurality of

An integratable semi-conductor memory cell has two bipolar transistors which are identical to one another and which have their collectors connected in series with respective circuit parts having a non-linear current characteristic, the respective circuit parts being connected to a first electrical potential. The circuit parts are also connected to the base of the other respective transistor. One emitter of each of the transistors is provided for control by means of logic signals and the invention is particularly characterized in that the circuit part located between the collector of each one of the transistors and a switching point carrying the first electrical potential are selected in such a fashion that the slope dU/dI of the current-voltage characteristic will always be higher than the slope of the corresponding current values in the current-voltage characteristic of the pn-junctions of the emitter-base circuit of both transistors.

Integratable semi-conductor memory cell

A logic element, particularly a bipolar gate circuit for an LSI-circuit, employing a pair of Schottky-diodes, a pair of resistances and a transistor, with the diodes, connected in high resistance direction, to respective inputs, the other sides of the diodes being connected in common to a first resistance and to the base of the transistor, with said first resistance being operatively connected to a reference potential, said second resistance connecting the collector of the transistor, and the common connection of said diodes.

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Munich, Germany

Peter Rydval