Schott Solar Ag

Angewandte Solarenergie-ase Gmbh

Shott Solar Ag

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Peter Roth

Hilmar Von Campe

Stefan Dauwe

Tobias Droste

Wilfried Schmidt

Andreas Teppe

Gunnar Schubert

Fritz Heyer

Jorg Horzel

Ingrid Ernst

Axel Metz

Stefan Bagus

A method for producing an electrically conducting metal contact on a semiconductor component having a coating on the surface of a semiconductor substrate. In order to keep transfer resistances low while maintaining good mechanical strength, the invention proposes applying a particle-containing fluid onto the coating, where the particles contain at least metal particles and glass frits, curing the fluid while simultaneously forming metal areas in the substrate through heat treatment, removing the cured fluid and the areas of the coating covered by the fluid, and depositing, for the purposes of forming the contact without using intermediate layers, electrically conducting material from a solution onto areas of the semiconductor component in which the coating is removed while at the same time conductively connecting the metal areas present in said areas on the substrate.

Method for producing a metal contact on a coated semiconductor substrate

A process for forming at least one local contact area of a substrate of an electrical component for contacting the contact area with a connector, in which the substrate, on the contact side, is provided with a sintered porous metal layer. To make available a mechanically durable, electrically faultless solderable contact area, it is proposed that the porous layer be compacted and/or removed in the contact area to be formed.

Process for producing a contact area of an electronic component

The invention relates to a process for heat treatment of two-dimensional objects such as semiconductor wafers, for example in the form of silicon wafers, where the objects are arranged on supports and are conveyed through a heating unit, in particular continuously. To achieve a targeted treatment of a two-dimensional object, in particular of a semiconductor component such as a silicon wafer, on one side only, while at the same time achieving a high throughput with incorporation as necessary into a continuous overall manufacturing process, it is proposed that the objects be arranged in full surface contact with the supports, which cover the objects completely or almost completely on their underside and which in turn comprise quartz glass in particular.

Process and arrangement for heat treatment of two-dimensional objects

Growing community of inventors

Hanau, Germany

Peter Roth