Applied Materials, Inc.

Kla-tencor Technologies Corporation

Kla Tencor Corporation

E.i. Dupont De Nemours and Company

Aviza Technology Limited

Asml Us, Inc.

Silcon Valley Group Thermal Systems, LLC

Peter Rose

Allen Park

Eugene Lopata

Ellis Chang

John Thomas Felts

Geoffrey Ryding

Marvin Farley

Sagar A Kekare

Khurram Zafar

Theodore H Smick

Shu Satoh

Andrew Edward Feiring

Mark Armstrong McCord

Brian Duffy

Takao Sakase

Theodore Arthur Treat

John Ruffell

Gordon Abbott

Glenn Florence

Christos Christou

Michael Mocella

Yakov Brichko

Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Methods and systems for utilizing design data in combination with inspection data

Various methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions are provided. One computer-implemented method includes using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions. The one or more defect-related functions include one or more post-mask, defect-related functions.

Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions

Various computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects are provided. One computer-implemented method for determining if actual defects are potentially systematic defects or potentially random defects includes comparing a number of actual defects in a group to a number of randomly generated defects in a group. The actual defects are detected on a wafer. A portion of a design on the wafer proximate a location of each of the actual defects in the group and each of the randomly generated defects in the group is substantially the same. The method also includes determining if the actual defects in the group are potentially systematic defects or potentially random defects based on results of the comparing step.

Computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects

A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si&#x2014;O&#x2014;Si or Si&#x2014;N&#x2014;Si groups with organic side groups attached to the backbone.

Low &#x3ba; dielectric inorganic/organic hybrid films and method of making

An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly Pfor subsequent acceleration for high energy implantation.

Indirectly heated button cathode for an ion source

A process is disclosed for forming a fluoropolymer layer on a thin film device, comprising contacting said thin film device with a gas phase fluoromonomer, and initiating polymerization of said fluoromonomer with a free radical polymerization initiator whereby said fluoromonomer polymerizes to form said fluoropolymer layer on said thin film device.

Fluoropolymer interlayer dielectric by chemical vapor deposition

A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si&mdash;O&mdash;Si or Si&mdash;N&mdash;Si groups with organic side groups attached to the backbone.

Low &kgr; dielectric inorganic/organic hybrid films and method of making

A back scattered ion receiver is mounted on the process chamber of an ion implanter to receive beam ions back scattered from a wafer mounted on the wafer holder in the chamber. Minima in the intensity of back scattered ions as the wafer on the holder is moved relative to the beam direction, can be used to obtain an accurate calibration of the true beam direction. Beam direction error can then be compensated for when operating holder tilt and twist mechanisms so as to bring a process wafer accurately into the required orientation relative to the true beam. If the crystallographic alignment and orientation of process wafers has been precharacterised, this data can be used to control the wafer holder to align process wafers crystallographically to the process beam.

Determining beam alignment in ion implantation using Rutherford Back Scattering

An ion source assembly,is disclosed, the assembly comprising a source sub assembly having an ion source,, an extraction electrode,and an electrically insulating high voltage bushing,to support the extraction electrode,relative to the ion source,. The ion source assembly further includes a chamber,having an exit aperture to allow egress of ions to an ion implanter. The chamber,encloses one or more further electrodes,. The source sub assembly is mounted to the chamber,via a hinge,. This allows ready access to the inner walls of the chamber,, which in turn allows easier maintenance and cleaning of the further electrodes,as well as the inner walls of the chamber,. Preferably, a liner,is employed on the inner walls of the chamber

Movable ion source assembly

A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si--O--Si or Si--N--Si groups with organic side groups attached to the backbone.

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Boulder Creek, CA, United States of America

Peter Rose