International Business Machines Corporation

The United States of America As Represented by the Department of Commerce

Peter Roitman

Devendra K Sadana

An SOI substrate and method of forming is described incorporating the steps of implanting oxygen under two conditions and performing two high temperature anneals at temperatures above 1250&deg; C. and above 1300&deg; C., respectively, at two respective oxygen concentrations. The invention overcomes the problem of high SOI substrate fabrication cost due to ion implant time and of getting high quality buried oxide (BOX) layers below a thin layer of single crystal silicon.

Silicon-on-insulator substrates using low dose implantation

An SOI substrate and method of forming is described incorporating the steps of implanting oxygen under two conditions and performing two high temperature anneals at temperatures above 1250.degree. C. and above 1300.degree. C., respectively, at two respective oxygen concentrations. The invention overcomes the problem of high SOI substrate fabrication cost due to ion implant time and of getting high quality buried oxide (BOX) layers below a thin layer of single crystal silicon.

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Gaithersburg, MD, United States of America

Peter Roitman