Novaled Gmbh

Peter Robaschik

Benjamin Schulze

Volodymyr Senkovskyy

Regina Luschtinetz

Ulrich Denker

Martin Ammann

Alexandra Lamprecht

Max Peter Nüllen

Pierre Seidenglanz

Stefan Zott

Anne Fadhel

Jakob Jacek Wudarczyk

The present invention relates to a method for preparing an organic semiconducting layer comprising the steps: a) providing a first composition in a first vacuum thermal evaporation source, the first composition comprising aa) a first organic compound, the first organic compound comprising at least one unsubstituted or substituted C-Ccondensed aryl group and/or at least one unsubstituted or substituted C-Cheteroaryl group, wherein the one or more substituent(s) if present, are selected from the group consisting of (i) deuterium, (ii) a halogen, (iii) a Cto Csilyl group, (iv) a Cto Calkyl group, (v) a C to Calkylsilyl group, (vi) a Cto Carylsilyl group, (vii) a Cto Ccycloalkyl group, (viii) a Cto Cheterocycloalkyl group, (ix) a Cto Caiyl group, (x) a Cto Cheteroaryl group, (xi) a Cto Cperfluoro-hydrocarbyl group, or (xii) a Cto Ctrifluoroalkyl group, wherein the first organic compound has i) a dipole moment in the range of ≥0 and ≤2 Debye; and ii) a molecular weight in the range of ≥400 and ≤1,800; and bb) a metal borate compound; b) transferring the first composition from the solid phase into the gas phase in a vacuum chamber; and c) depositing the first composition on a substrate to form the organic semiconducting layer; a composition for use therein, and an organic electronic device prepared this way.

Method for preparing an organic semiconducting layer, a composition for use therein and an organic electronic device

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Dresden, Germany

Peter Robaschik