International Business Machines Corporation

Other

Intermec IP Corporation

International Business Machines Operation

Peter Richard Duncombe

Deborah A Neumayer

Robert B Laibowitz

Thomas M Shaw

Sampath Purushothaman

Christos Dimitrios Dimitrakopoulos

Bruce Kenneth Furman

Daniel C Edelstein

Tak H Ning

Supratik Guha

Young-Ho Kim

George Frederick Walker

Emanuel Israel Cooper

Subhash Laxman Shinde

Shaji Farooq

Sarah Huffsmith Knickerbocker

Robert Anthony Rita

Robert Rosenberg

Rao Venkateswara Vallabhaneni

Arunava Gupta

Nestor A Bojarczuk, Jr

Jae M Park

Jungihl Kim

Robert R Shaw

Mark O Neisser

Takeshi Takamori

Farid Youssif Aoude

Edward A Giess

Joseph M Karasinski

Friedel Muller-Landau

Jon A Van Hise

James M Brownlow, Deceased

Xinwei Li

Katherine Lynn Saenger

Paul Andrew Moskowitz

Wesley Charles Natzle

David Edward Kotecki

Michael John Brady

Dah-Weih Duan

Chienfan Yu

Ali Afzali-ardakani

Christopher A Field

An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450&deg; C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

BEOL decoupling capacitor

A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

Thin-film field-effect transistor with organic semiconductor requiring low operating voltages

A method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material.

Selective growth of ferromagnetic films

A radio frequency (RF) transponder (RF tag) is proposed, where a high dielectric constant material is used in operative cooperation with a tag antenna so that the distance of the tag antenna from conducting or absorbing surfaces may be reduced, and so the tag dimensions may be reduced.

RF Tag having high dielectric constant material

A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material

Selective growth of ferromagnetic films for magnetic memory, storage-based devices

High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450&deg; C. or less.

Amorphous dielectric capacitors on silicon

Multilayer ferroelectric capacitor structures comprising a ferroelectric film having a combination of different ferroelectric materials or compositions such as strontium bismuth tantalate, strontium bismuth niobate, bismuth titanate, strontium bismuth tantalate niobate, lead zirconate titanate, lead lanthanum zirconate titanate are disclosed. A method of preparing the multilayer ferroelectric film containing at least two different ferroelectric materials and/or more than one composition of ferroelectric material is also disclosed.

Multilayer ferroelectric capacitor structure

This invention relates to a method for improving the chemical and electrical performance characteristics of a high dielectric constant material. The method comprises the steps of first obtaining a barium containing high dielectric constant material, the material having an upper surface and then modifying the surface chemistry of said upper surface by interacting said upper surface with a gas reactant in a closed environment. In a variant of the method, the gas reactant preferentially reacting with upper surface as compared to the bulk.

Method for cleaning the surface of a dielectric

Metal alkoxyalkoxidecarboxylates wherein the alkoxy portion has 2-6 carbon atoms and the alkoxide portion has 2-6 carbon atoms are provided and are useful in forming films on a substrate.

Metal alkoxyalkoxidecarboxylates and use to form films

Thin-film field-effect transistor with organic semiconductor requiring

Metal alkoxyalkoxides wherein the alkoxy portion has 3-6 carbon atoms and the alkoxide portion has 2-6 carbon atoms are provided and are useful in forming films on a substrate.

Alkoxyalkoxides and use to form films

A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. A fabrication process for the same, especially a process for deposition of the gate insulator using chemical solutions. The structure comprises a suitable substrate disposed with the following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

Fabrication of thin film effect transistor comprising an organic

An unsintered aluminum nitride body including: (a) 1 to 5 weight percent of a vitreous solid of boria, alumina, and calcia in the proportions of (1) boria between 3 and 25 weight percent, (2) alumina between 10 and 50 weight percent, and (3) calcia between 40 and 80 weight percent; and (b) aluminum nitride powder as the balance of the aluminum nitride body. The invention further relates to a method of forming the unsintered aluminum nitride body and then sintering it at a temperature between 1550 and 1650 degrees Centrigrade so as to form a dense, thermally conductive aluminum nitride body.

Aluminum nitride body and method for forming said body utilizing a

An unsintered aluminum nitride body including:

Aluminum nitride body utilizing a vitreous sintering additive

Growing community of inventors

Peekskill, NY, United States of America

Peter Richard Duncombe