Basf Se Corporation

Peter Przybylski

Julian Proelss

Yongqing Lan

Zhenyu Bao

Andreas Klipp

Michael Lauter

Haci Osman Guevenc

Max Siebert

Leonardus Leunissen

Christian Daeschlein

Te Yu Wei

Roelf-Peter Baumann

Ivan Garcia Romero

Julian Prölß

Christian DÄSCHLEIN

Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein Rand Rare independently from each other hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-Butyl, or sec-butyl, Ris methyl and x and y are an integer, 1 (B)poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5. 

Composition for post chemical-mechanical-polishing cleaning

A post chemical-mechanical-polishing (post-CMP) cleaning composition including:

Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of &#x2212;15 mV or below at a pH in the range of from 2 to 6 (B) one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers

Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of &#x2212;15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Chemical-mechanical polishing compositions comprising polyethylene imine

Described is a chemical-mechanical polishing (CMP) composition comprising the following components:

Chemical-mechanical polishing compositions comprising N,N,N',N&#x2032;-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid

Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a substrate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of &#x2212;15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

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Ludwigshafen, Germany

Peter Przybylski